Fabrication of α-Bi2O3, β-Bi2O3, and β-Bi2O3/SGO composite: correlation between structure and electrochemical performance

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shiju Yang, Libing Qian, Yunjie Ping, Zhe Liu, Chunqing He
{"title":"Fabrication of α-Bi2O3, β-Bi2O3, and β-Bi2O3/SGO composite: correlation between structure and electrochemical performance","authors":"Shiju Yang,&nbsp;Libing Qian,&nbsp;Yunjie Ping,&nbsp;Zhe Liu,&nbsp;Chunqing He","doi":"10.1007/s10854-026-18548-3","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, α-Bi<sub>2</sub>O<sub>3</sub> and β-Bi<sub>2</sub>O<sub>3</sub> were successfully synthesized via a hydrothermal calcination route, and their electrochemical properties were systematically studied. The results demonstrate that the low-temperature stable α-phase Bi<sub>2</sub>O<sub>3</sub> presents superior electrochemical performance. This can be ascribed to its stable structure, which not only effectively suppresses surface side reactions but also preserves structural integrity during repeated charge–discharge cycling. To further enhance the electrochemical performance of Bi<sub>2</sub>O<sub>3</sub>, the Bi<sub>2</sub>O<sub>3</sub>–SGO composite was rationally designed and successfully synthesized via a composite strategy combining β-Bi<sub>2</sub>O<sub>3</sub> and sulfonated graphene oxide (SGO). Analysis of the charge storage mechanism reveals that the addition of a small amount of SGO does not introduce surface-controlled capacitance into the material. The incorporation of SGO can enhance the electrical conductivity and optimize the microscopic morphology of the composite, as well as alleviate the volume expansion during the charge–discharge process. This effectively improves the intrinsic structural instability of β-Bi<sub>2</sub>O<sub>3</sub>, thereby synergistically boosting the electrochemical performance of the electrode material. The as-fabricated β-Bi<sub>2</sub>O<sub>3</sub>/SGO composite delivers a high specific capacitance of 1105 F g<sup>−1</sup> at 1 A g<sup>−1</sup>. It also possesses superior rate capability with 758 F g<sup>−1</sup> maintained at 50 A g<sup>−1</sup> and exhibits satisfactory cycling durability, achieving 88% capacitance retention over 2000 consecutive cycles. As-obtained asymmetric supercapacitors with NiCoO<sub>2</sub> as the positive electrode and β-Bi<sub>2</sub>O<sub>3</sub>/SGO as the negative electrode possess a superior energy density of up to 38.5 Wh kg<sup>−1</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2026-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-026-18548-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, α-Bi2O3 and β-Bi2O3 were successfully synthesized via a hydrothermal calcination route, and their electrochemical properties were systematically studied. The results demonstrate that the low-temperature stable α-phase Bi2O3 presents superior electrochemical performance. This can be ascribed to its stable structure, which not only effectively suppresses surface side reactions but also preserves structural integrity during repeated charge–discharge cycling. To further enhance the electrochemical performance of Bi2O3, the Bi2O3–SGO composite was rationally designed and successfully synthesized via a composite strategy combining β-Bi2O3 and sulfonated graphene oxide (SGO). Analysis of the charge storage mechanism reveals that the addition of a small amount of SGO does not introduce surface-controlled capacitance into the material. The incorporation of SGO can enhance the electrical conductivity and optimize the microscopic morphology of the composite, as well as alleviate the volume expansion during the charge–discharge process. This effectively improves the intrinsic structural instability of β-Bi2O3, thereby synergistically boosting the electrochemical performance of the electrode material. The as-fabricated β-Bi2O3/SGO composite delivers a high specific capacitance of 1105 F g−1 at 1 A g−1. It also possesses superior rate capability with 758 F g−1 maintained at 50 A g−1 and exhibits satisfactory cycling durability, achieving 88% capacitance retention over 2000 consecutive cycles. As-obtained asymmetric supercapacitors with NiCoO2 as the positive electrode and β-Bi2O3/SGO as the negative electrode possess a superior energy density of up to 38.5 Wh kg−1.

α-Bi2O3、β-Bi2O3及β-Bi2O3/SGO复合材料的制备:结构与电化学性能的关系
本文采用水热煅烧的方法成功合成了α-Bi2O3和β-Bi2O3,并对其电化学性能进行了系统的研究。结果表明,低温稳定α-相Bi2O3具有优异的电化学性能。这可以归因于其稳定的结构,不仅有效地抑制表面副反应,而且在反复充放电循环中保持结构完整性。为了进一步提高Bi2O3的电化学性能,通过β-Bi2O3与磺化氧化石墨烯(SGO)的复合策略,合理设计并成功合成了Bi2O3 - SGO复合材料。电荷存储机理分析表明,少量SGO的加入不会给材料引入表面控制电容。SGO的加入可以提高复合材料的导电性,优化复合材料的微观形貌,并缓解充放电过程中的体积膨胀。这有效地改善了β-Bi2O3的固有结构不稳定性,从而协同提高了电极材料的电化学性能。制备的β-Bi2O3/SGO复合材料在1a1g−1时具有1105 F g−1的高比电容。它还具有优异的速率能力,在50 A g−1下保持758 F g−1,并具有令人满意的循环耐久性,在2000个连续循环中实现88%的电容保持。以NiCoO2为正极,β-Bi2O3/SGO为负极的非对称超级电容器具有高达38.5 Wh kg−1的能量密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书