Cr-site engineering of BaFeO3 perovskites: correlating structural defects, electronic structure, optical response and charge transport

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ariful Alam, Mst. Sukhi Akter, Shefa Akter, Md. Ridwanul Hasan, Md. Abdur Rob, Jobair Maudood, Md. Saiful Islam, Nazia Khatun, Suravi Islam, Abul K. Azad, Md. Shah Alam, Shahzad Hossain
{"title":"Cr-site engineering of BaFeO3 perovskites: correlating structural defects, electronic structure, optical response and charge transport","authors":"Ariful Alam,&nbsp;Mst. Sukhi Akter,&nbsp;Shefa Akter,&nbsp;Md. Ridwanul Hasan,&nbsp;Md. Abdur Rob,&nbsp;Jobair Maudood,&nbsp;Md. Saiful Islam,&nbsp;Nazia Khatun,&nbsp;Suravi Islam,&nbsp;Abul K. Azad,&nbsp;Md. Shah Alam,&nbsp;Shahzad Hossain","doi":"10.1007/s10854-026-18526-9","DOIUrl":null,"url":null,"abstract":"<div><p>Ba<sub>1−<i>x</i></sub>Cr<sub><i>x</i></sub>FeO<sub>3</sub> (<i>x</i> = 0.1–0.4) perovskite ceramics were synthesized by the solid-state reaction method to investigate the role of Cr-site substitution in modulating their structural, optical, dielectric, and vibrational properties. X-ray diffraction confirmed the retention of the BaFeO<sub>3</sub>-type perovskite framework, while Williamson–Hall, Halder–Wagner, modified Scherrer, and size–strain plot analyses revealed pronounced method-dependent crystallite-size estimates and composition-dependent lattice distortion. The SSP, stacking fault, lattice strain, and dislocation density analyses further indicated that BCF3 possesses comparatively lower structural disorder, whereas BCF4 exhibits the highest lattice distortion and defect density. The optical bandgap showed a non-monotonic composition dependence, decreasing to a minimum of 2.948 eV for Ba<sub>0.8</sub>Cr<sub>0.2</sub>FeO<sub>3</sub> before increasing with further Cr incorporation, demonstrating composition-sensitive modification of the electronic structure and enhanced visible-light response at <i>x</i> = 0.2. The dielectric response exhibited pronounced frequency dispersion, particularly at low frequencies, consistent with interfacial polarization and defect-assisted charge transport. FTIR analysis confirmed Fe–O/Cr–O vibrations and progressive modification of the local FeO₆/CrO₆ octahedral environment with increasing Cr content. Overall, the results demonstrate that Cr-site engineering provides a controllable means of coupling lattice distortion with optical and dielectric responses while preserving the BaFeO<sub>3</sub> perovskite framework. This composition-dependent tunability highlights Cr substitution as an effective strategy for tailoring the functional properties of BaFeO<sub>3</sub>-based ceramics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 28","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-026-18526-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Ba1−xCrxFeO3 (x = 0.1–0.4) perovskite ceramics were synthesized by the solid-state reaction method to investigate the role of Cr-site substitution in modulating their structural, optical, dielectric, and vibrational properties. X-ray diffraction confirmed the retention of the BaFeO3-type perovskite framework, while Williamson–Hall, Halder–Wagner, modified Scherrer, and size–strain plot analyses revealed pronounced method-dependent crystallite-size estimates and composition-dependent lattice distortion. The SSP, stacking fault, lattice strain, and dislocation density analyses further indicated that BCF3 possesses comparatively lower structural disorder, whereas BCF4 exhibits the highest lattice distortion and defect density. The optical bandgap showed a non-monotonic composition dependence, decreasing to a minimum of 2.948 eV for Ba0.8Cr0.2FeO3 before increasing with further Cr incorporation, demonstrating composition-sensitive modification of the electronic structure and enhanced visible-light response at x = 0.2. The dielectric response exhibited pronounced frequency dispersion, particularly at low frequencies, consistent with interfacial polarization and defect-assisted charge transport. FTIR analysis confirmed Fe–O/Cr–O vibrations and progressive modification of the local FeO₆/CrO₆ octahedral environment with increasing Cr content. Overall, the results demonstrate that Cr-site engineering provides a controllable means of coupling lattice distortion with optical and dielectric responses while preserving the BaFeO3 perovskite framework. This composition-dependent tunability highlights Cr substitution as an effective strategy for tailoring the functional properties of BaFeO3-based ceramics.

BaFeO3钙钛矿的Cr-site工程:相关结构缺陷、电子结构、光学响应和电荷输运
采用固相反应法制备了Ba1−xCrxFeO3 (x = 0.1 ~ 0.4)钙钛矿陶瓷,研究了cr位取代对其结构、光学、介电和振动性能的影响。x射线衍射证实了bafeo3型钙钛矿框架的保留,而Williamson-Hall, Halder-Wagner, modified Scherrer和尺寸-应变图分析显示了明显的方法依赖的晶体尺寸估计和成分依赖的晶格畸变。SSP、层错、晶格应变和位错密度分析进一步表明,BCF3具有相对较低的结构无序性,而BCF4具有最高的晶格畸变和缺陷密度。光学带隙表现出非单调的成分依赖性,Ba0.8Cr0.2FeO3的带隙减小到最小的2.948 eV,然后随着Cr的进一步加入而增加,表明电子结构的成分敏感修饰和x = 0.2时的可见光响应增强。介质响应表现出明显的频率色散,特别是在低频,与界面极化和缺陷辅助电荷输运一致。FTIR分析证实Fe-O /Cr - o的振动和局部FeO /CrO的八面体环境随Cr含量的增加而逐渐改变。总体而言,结果表明,Cr-site工程提供了一种可控制的方法,在保留BaFeO3钙钛矿框架的同时,将晶格畸变与光学和介电响应耦合在一起。这种依赖于成分的可调节性突出了Cr取代作为一种有效的策略来调整bafeo3基陶瓷的功能特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书