Drop in the Hall Resistance As a Possible Indication of a Transition to a Zero-Filling-Factor Quantum Hall Effect State in a HgTe/CdHgTe Double Quantum Well

Abstract

A decrease in the Hall resistance ρ_yx(B) in high magnetic fields has been observed in HgTe/CdHgTe double quantum well heterostructures after reaching the quantum Hall effect phase with a filling factor of ν = 1, indicating a possible transition to a state with ν = 0. A comparison with the calculated Fermi level trajectories in the picture of Landau levels suggests that this decrease in ρ_yx(B) can be attributed to the mutual influence of the electron and hole states in this system. Correlations between the chiral trajectories of electrons and holes in the two layers of the double quantum well also likely contribute, since this effect has not been observed in identical heterostructures with a single HgTe quantum well.