Novel cmWave A1-Mode Filter Design Based on Lithium Niobate On-Chip Capacitors

IF 3.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fuhong Lin;Kai Yang;Yiming Wang;Juan Wang;Zhongbin Dai;Jiming Fang;Jie Chen;Anping Zhang;Jialin Long;Chengjie Zuo
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引用次数: 0

Abstract

In this work, a novel design scheme of on-chip frequency shifting is proposed and applied to acoustic resonators for the first time. On the same chip with first-order antisymmetric mode (A1-mode) resonators on 128° Y-cut lithium niobate (LiNbO3 or LN) thin film, LN based capacitors are proposed and realized by rotating the in-plane periodic direction of interdigitated transducer (IDT) electrodes to align the electric field direction at 90° relative to the +X axis. In a ladder-type topology, the series branch achieves an upward shift of the series resonant frequency by connecting an A1-mode resonator in series with an on-chip LN capacitor, while the shunt branch realizes a downward shift of the parallel resonant frequency by connecting an A1-mode resonator in parallel with a capacitor or rotating the IDT electrodes to a specific angle. By aligning these two frequencies through careful design, an acoustic filter is successfully implemented. Compared to traditional A1-mode filters, which rely on differentially localized etching to achieve frequency shifts in the series branch, the proposed novel design scheme reduces at least one photolithography and etching step, thereby greatly lowering process complexity and improving yield. Through this approach, this work demonstrates a high frequency (in the centimeter-wave or cmWave band) filter operating at 14.3 GHz with an insertion loss (IL) of 3.6 dB, a bandwidth of 961 MHz (FBW of 6.7%), and an out-of-band rejection (OoB) of 14 dB. This proves the validity of the pure layout-design based frequency shifting mechanism and enables the Lamb wave resonator technology with better manufacturability for 6G cmWave wireless communications.[2026-0082]
基于铌酸锂片上电容的新型cmWave a1模式滤波器设计
本文提出了一种新的片上移频设计方案,并首次应用于声学谐振器中。在128°y型切割铌酸锂(LiNbO3或LN)薄膜上具有一阶反对称模式(a1模式)谐振器的同一芯片上,提出了LN基电容器,并通过旋转交叉换能器(IDT)电极的平面内周期方向使电场方向相对于+X轴对齐90°来实现。在阶梯型拓扑中,串联支路通过将a1模谐振器与片上LN电容串联实现串联谐振频率的向上移位,而并联支路通过将a1模谐振器与电容并联或将IDT电极旋转特定角度实现并联谐振频率的向下移位。通过精心设计将这两个频率对准,成功实现了一个声学滤波器。与传统a1模滤波器依靠差分局部刻蚀来实现串联支路的频移相比,本文提出的设计方案至少减少了一个光刻和刻蚀步骤,从而大大降低了工艺复杂度,提高了良率。通过这种方法,本研究展示了一个工作在14.3 GHz的高频(厘米波或毫米波频段)滤波器,其插入损耗(IL)为3.6 dB,带宽为961 MHz (FBW为6.7%),带外抑制(OoB)为14 dB。这证明了基于纯布图设计的移频机制的有效性,并使Lamb波谐振器技术具有更好的可制造性,可用于6G cmWave无线通信。[2026-0082]
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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