Long-Term Frequency Stability of a Dual-Oven MEMS Oscillator Based on a High-Q Lateral Extensional Resonator

IF 3.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Maliha Sultana;Hannaneh Mahdavi;Hamed Atashbar;Hakhamanesh Mansoorzare;Reza Abdolvand
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引用次数: 0

Abstract

This work presents a 5 MHz microelectromechanical systems (MEMS) oscillator based on a high-quality factor ( $Q_{\mathrm {unloaded}} \gt 50$ ,000) lateral extensional (LE) mode Aluminum Nitride (AlN)-on-silicon (Si) resonator for stable clock applications. The resonator is designed to have a turn-over temperature (ToT) above $100~^{\circ }$ C and is fabricated on a $350~\mu $ m thick single-crystal Si substrate to achieve high $Q$ while its lateral dimensions are optimized to obtain a low motional impedance. To improve frequency stability, the oscillator is operated under high vacuum and evaluated using two thermal-control configurations. The single-oven configuration utilizes an integrated heater on the resonator and applies a fixed integrated-heater bias near the ToT, while the dual-oven configuration additionally stabilizes the environmental temperature fluctuations within the vacuum-chamber using controlled external heating. Both configurations reach an Allan deviation (ADEV) of approximately $1.7\times 10^{-10}$ at $\tau =1$ s, demonstrating strong short-term stability enabled by the high- $Q$ resonator. However, the dual-oven configuration suppresses the increase in ADEV at long averaging times, maintaining an ADEV of approximately $1.6\times 10^{-10}$ at $\tau =1000$ s compared with $9.5\times 10^{-9}$ for the single-oven operation, and exhibiting an average net drift rate of 0.85 ppb/h over 32 h. The results distinguish the roles of the high- $Q$ resonator and external chamber thermal stabilization in achieving short- and long-term frequency stability, respectively.[2026-0044]
基于高q横向扩展谐振器的双烘箱MEMS振荡器的长期频率稳定性
这项工作提出了一个5 MHz微机电系统(MEMS)振荡器,该振荡器基于高质量因子($Q_{\mathrm {unloaded}} \gt 50$,000)横向扩展(LE)模式氮化铝(AlN)硅上(Si)谐振器,用于稳定时钟应用。该谐振器的翻转温度(ToT)高于$100~^{\circ }$ C,并在$350~\mu $ m厚的单晶Si衬底上制造,以实现高$Q$,同时优化其横向尺寸以获得低运动阻抗。为了提高频率稳定性,振荡器在高真空下工作,并使用两种热控制配置进行评估。单炉配置利用谐振器上的集成加热器,并在ToT附近施加固定的集成加热器偏置,而双炉配置使用受控的外部加热来额外稳定真空室内的环境温度波动。两种配置在$\tau =1$ s处的艾伦偏差(ADEV)约为$1.7\times 10^{-10}$,显示出高$Q$谐振器带来的强大的短期稳定性。然而,在较长的平均时间内,双炉配置抑制了ADEV的增加,在$\tau =1000$ s时,与$9.5\times 10^{-9}$相比,单炉运行时ADEV保持在$1.6\times 10^{-10}$左右,并且在32 h内平均净漂移率为0.85 ppb/h。结果区分了高$Q$谐振器和外腔热稳定在实现短期和长期频率稳定中的作用。[2026-0044]
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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