{"title":"Orientation-Dependent Domain Structure and Buffer Layer Functionality of Epitaxial Bixbyite Sc2O3 Thin Films","authors":"Silvia Damerio, Saul Estandia, Gabriele De Luca","doi":"10.1021/acs.cgd.6c00557","DOIUrl":null,"url":null,"abstract":"<p>We report the epitaxial growth of high-quality bixbyite-structured Sc<sub>2</sub>O<sub>3</sub> thin films on differently oriented Yttria-stabilized Zirconia (YSZ) substrates by radio-frequency magnetron sputtering. Films grown along the ⟨111⟩ orientation exhibit atomically flat surfaces, full structural relaxation, and a single rotational variant, as confirmed by X-ray diffraction and scanning transmission electron microscopy. In contrast, ⟨001⟩-oriented films display rotational domains and residual tensile strain, while ⟨110⟩-oriented films exhibit a columnar morphology with significantly higher surface roughness. When we use ⟨111⟩-oriented Scandia-buffered YSZ substrates to grow hexagonal YMnO<sub>3</sub> thin films, we stabilize them in a compressive strain state. These results establish Sc<sub>2</sub>O<sub>3</sub> epitaxial films as promising virtual buffer layers for the growth of functional oxides.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"26 19","pages":"7547–7555"},"PeriodicalIF":3.6000,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.6c00557","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/9/27 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
We report the epitaxial growth of high-quality bixbyite-structured Sc2O3 thin films on differently oriented Yttria-stabilized Zirconia (YSZ) substrates by radio-frequency magnetron sputtering. Films grown along the ⟨111⟩ orientation exhibit atomically flat surfaces, full structural relaxation, and a single rotational variant, as confirmed by X-ray diffraction and scanning transmission electron microscopy. In contrast, ⟨001⟩-oriented films display rotational domains and residual tensile strain, while ⟨110⟩-oriented films exhibit a columnar morphology with significantly higher surface roughness. When we use ⟨111⟩-oriented Scandia-buffered YSZ substrates to grow hexagonal YMnO3 thin films, we stabilize them in a compressive strain state. These results establish Sc2O3 epitaxial films as promising virtual buffer layers for the growth of functional oxides.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.