Orientation-Dependent Domain Structure and Buffer Layer Functionality of Epitaxial Bixbyite Sc2O3 Thin Films

IF 3.6 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Crystal Growth & Design Pub Date : 2026-10-07 Epub Date: 2026-09-27 DOI:10.1021/acs.cgd.6c00557
Silvia Damerio, Saul Estandia, Gabriele De Luca
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引用次数: 0

Abstract

We report the epitaxial growth of high-quality bixbyite-structured Sc2O3 thin films on differently oriented Yttria-stabilized Zirconia (YSZ) substrates by radio-frequency magnetron sputtering. Films grown along the ⟨111⟩ orientation exhibit atomically flat surfaces, full structural relaxation, and a single rotational variant, as confirmed by X-ray diffraction and scanning transmission electron microscopy. In contrast, ⟨001⟩-oriented films display rotational domains and residual tensile strain, while ⟨110⟩-oriented films exhibit a columnar morphology with significantly higher surface roughness. When we use ⟨111⟩-oriented Scandia-buffered YSZ substrates to grow hexagonal YMnO3 thin films, we stabilize them in a compressive strain state. These results establish Sc2O3 epitaxial films as promising virtual buffer layers for the growth of functional oxides.

外延Bixbyite Sc2O3薄膜的取向依赖畴结构和缓冲层功能
我们报道了用射频磁控溅射在不同取向的钇稳定氧化锆(YSZ)衬底上外延生长高质量的bixbyte结构Sc2O3薄膜。沿着⟨111⟩取向生长的薄膜表现出原子平坦的表面,完全的结构松弛,和单一的旋转变体,如x射线衍射和扫描透射电子显微镜所证实的那样。相比之下,⟨001⟩取向的薄膜显示旋转域和残余拉伸应变,而⟨110⟩取向的薄膜显示具有显着更高表面粗糙度的柱状形态。当我们使用⟨111⟩取向的scandi缓冲的YSZ衬底来生长六边形YMnO3薄膜时,我们将它们稳定在压缩应变状态。这些结果表明,Sc2O3外延薄膜是功能氧化物生长的有前途的虚拟缓冲层。
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来源期刊
Crystal Growth & Design
Crystal Growth & Design 化学-材料科学:综合
CiteScore
6.30
自引率
10.50%
发文量
650
审稿时长
1.9 months
期刊介绍: The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials. Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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