Shuaihang Xu,Qingxuan Sun,Jiahao Liao,Changjie Zhou,Huili Zhu,Cunzhi Sun,Weifeng Yang
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引用次数: 0
Abstract
Defects determine the photoresponse of β-Ga2O3 photodetectors, yet the interplay between self-trapped holes and deep-level recombination centers remains poorly understood. In this work, plasma-assisted molecular-beam epitaxy produced a (-201)-oriented film on sapphire with a sharp interface and a (400)-oriented film on 4H-SiC with an amorphous SiOx interlayer. Structural and spectroscopic measurements show markedly different dislocation and oxygen-vacancy signatures in these two heteroepitaxial systems. For the (-201)-oriented PD, the photocurrent decreased as the temperature rose to 150 °C and then partially recovered at 200 °C, driven by the thermal activation of the release of self-trapped holes. In contrast, the (400)-oriented photodetector showed a steady decrease in photocurrent, as deep-level recombination centers effectively suppressed the contribution from the release of self-trapped holes. Furthermore, the higher defect density in the (400)-oriented photodetector leads to faster response times, owing to enhanced non-radiative recombination through deep-level centers.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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