High peak-current AlGaAs tunnel junctions for 10-junction GaAs laser power converters

IF 3.8 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2026-10-05 DOI:10.1063/5.0351907

Yudan Gou,Jiaxin Chen,Di Feng,Jun Wang,Yuting Zhang,Yao Xiao,Quanling Li,Shujuan Sun,Yong Tian,Yang Cheng,Hao Zhou,Hao Zhang,Guoliang Deng

{"title":"High peak-current AlGaAs tunnel junctions for 10-junction GaAs laser power converters","authors":"Yudan Gou,Jiaxin Chen,Di Feng,Jun Wang,Yuting Zhang,Yao Xiao,Quanling Li,Shujuan Sun,Yong Tian,Yang Cheng,Hao Zhou,Hao Zhang,Guoliang Deng","doi":"10.1063/5.0351907","DOIUrl":null,"url":null,"abstract":"Laser power converters (LPCs) are the core photovoltaic devices that act as receivers in optical wireless power transmission systems. In these devices, tunnel junctions (TJs) are employed to vertically interconnect multiple absorption sub-cells in series to construct high-voltage multi-junction LPCs. This work systematically investigates the effects of the Al composition, growth temperature, and doping levels on the performance of AlxGa(1−x)As TJs. Furthermore, the performance of TJs employing different doping schemes (conventional doping, Si + Te co-doping, and delta-doping) and structural designs [quantum well (QW) insertion] was evaluated. For samples with Al compositions of 0%, 7%, 22%, and 28%, the maximum peak tunneling current densities reached 31.0k, 20.3k, 4.8k, and 0.5k A/cm2, respectively, while the lowest tunneling resistivities achieved 1.17 × 10−5, 1.08 × 10−5, 1.89 × 10−5, and 1.39 × 10−4 Ω cm2, respectively. The optimized Al0.28Ga0.72As TJ, featuring a hybrid structure of Si + Te delta-doping and QW insertion, exhibited a peak tunneling current density of 14.6k A/cm2 in the as-grown state and maintained 1.1k A/cm2 after annealing. By applying this TJ structure to a 10-junction GaAs LPC, a photovoltaic conversion efficiency exceeding 60% was achieved.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"86 1","pages":""},"PeriodicalIF":3.8000,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0351907","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Laser power converters (LPCs) are the core photovoltaic devices that act as receivers in optical wireless power transmission systems. In these devices, tunnel junctions (TJs) are employed to vertically interconnect multiple absorption sub-cells in series to construct high-voltage multi-junction LPCs. This work systematically investigates the effects of the Al composition, growth temperature, and doping levels on the performance of AlxGa(1−x)As TJs. Furthermore, the performance of TJs employing different doping schemes (conventional doping, Si + Te co-doping, and delta-doping) and structural designs [quantum well (QW) insertion] was evaluated. For samples with Al compositions of 0%, 7%, 22%, and 28%, the maximum peak tunneling current densities reached 31.0k, 20.3k, 4.8k, and 0.5k A/cm2, respectively, while the lowest tunneling resistivities achieved 1.17 × 10−5, 1.08 × 10−5, 1.89 × 10−5, and 1.39 × 10−4 Ω cm2, respectively. The optimized Al0.28Ga0.72As TJ, featuring a hybrid structure of Si + Te delta-doping and QW insertion, exhibited a peak tunneling current density of 14.6k A/cm2 in the as-grown state and maintained 1.1k A/cm2 after annealing. By applying this TJ structure to a 10-junction GaAs LPC, a photovoltaic conversion efficiency exceeding 60% was achieved.

查看原文本刊更多论文

用于10结GaAs激光功率变换器的高峰值电流AlGaAs隧道结

激光功率变换器（LPCs）是光无线电力传输系统中充当接收器的核心光伏器件。在这些器件中，采用隧道结（TJs）将多个吸收子电池串联垂直互连，以构建高压多结lpc。本文系统地研究了Al成分、生长温度和掺杂水平对AlxGa(1−x)As TJs性能的影响。此外，采用不同掺杂方案（常规掺杂、Si + Te共掺杂和delta掺杂）和结构设计[量子阱（QW）插入]对TJs的性能进行了评估。对于Al含量为0%、7%、22%和28%的样品，最大峰值隧道电流密度分别为31.0k、20.3k、4.8k和0.5k A/cm2，最低隧道电阻率分别为1.17 × 10−5、1.08 × 10−5、1.89 × 10−5和1.39 × 10−4 Ω cm2。优化后的Al0.28Ga0.72As TJ具有Si + Te掺杂和QW插入的混合结构，在生长状态下的峰值隧穿电流密度为14.6k a /cm2，退火后的峰值隧穿电流密度保持在1.1k a /cm2。通过将该TJ结构应用于10结GaAs LPC，实现了超过60%的光伏转换效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.