Juliana Sebolt,Anton V. Ievlev,Prithwijit Mandal,Kyoungjun Lee,Jieun Kim,C. Stephen Hellberg,Patrick Irvin,Chang-Beom Eom,Jeremy Levy
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引用次数: 0
Abstract
SrTiO3 (STO) is among the most widely used substrates in complex oxide heterostructure research, yet the role of its trace impurity content in determining interface properties remains poorly understood. Here, we show that high-temperature annealing (the standard procedure for preparing TiO2-terminated STO surfaces) universally drives Fe impurities from the substrate bulk to the surface, forming a sharp, delta-like distribution within a few nanometers of the surface. Using time-of-flight secondary ion mass spectrometry with nanometer-scale depth resolution, we find that Fe is largely undetectable before annealing but appears prominently at the surface after annealing in all 16 substrates surveyed from three independent commercial suppliers. A systematic study on pieces diced from a single substrate demonstrates that surface Fe concentration increases with both annealing temperature and duration, following thermally activated, diffusion-limited kinetics with an activation energy of approximately 3 eV. Density functional theory calculations confirm a thermodynamic preference for Fe substitution near the STO surface, establishing the driving force for segregation. This annealing-induced redistribution effectively deposits a hidden layer of magnetic impurities within a few nanometers of the surface. These results have direct implications for complex oxide heterostructures such as LaAlO3/SrTiO3, where annealing-dependent Fe accumulation at the STO surface may account for the widely reported magnetic signatures at such interfaces.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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