Orientation-dependent interface-state properties underlying the “V”-shaped difference in temperature-dependent reverse characteristics of [010]- and [100]-oriented trench-MOSSBDs

IF 3.8 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2026-10-05 DOI:10.1063/5.0344720

Yitong Yang,Danning Tang,Yuan Li,Kai Peng,Shali Wang,Yunlong He,Xiaoli Lu,Xiaohua Ma,Yuanfu Zhao,Yue Hao

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引用次数: 0

Abstract

In β-Ga2O3 MOS-type trench diodes, electro-thermal performance is strongly limited by poor trench-sidewall interface quality induced by anisotropic dry etching. This issue is more pronounced in [100]-oriented trenches, which exhibit higher sidewall thermal conductivity than [010]-oriented trenches. However, the orientation-dependent impact of interface states on device reliability and the underlying physical mechanisms remain unclear. This work elucidates, for the first time, the orientation-dependent interface-state properties responsible for the distinctive “V”-shaped temperature dependence of the reverse I–V characteristics between [010]- and [100]-oriented β-Ga2O3 trench MOS-type Schottky barrier diodes (trench-MOSSBDs) with HfO2 dielectric. Within the low-temperature range (25–125 °C), the “V”-shaped behavior in [100]-oriented trench-MOSSBD originates from the temperature-dependent competition between slow and fast interface-state charge trapping/de-trapping processes, whereas the reverse characteristics of [010]-oriented trench-MOSSBDs are predominantly governed by fast interface states. These findings provide important physical insights into interface-state engineering in anisotropic β-Ga2O3 trench structures and offer guidance for the electro-thermal co-design of high-performance β-Ga2O3 trench power devices.

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[010]和[100]取向海沟- mossbd的温度依赖反向特性的“V”形差异背后的取向依赖界面状态属性

在β-Ga2O3 mos型沟槽二极管中，各向异性干刻蚀导致的沟槽-侧壁界面质量差严重限制了其电热性能。这一问题在[100]定向海沟中更为明显，与[010]定向海沟相比，[100]定向海沟的侧壁导热系数更高。然而，方向依赖的接口状态对设备可靠性的影响和潜在的物理机制仍然不清楚。这项工作首次阐明了取向相关的界面状态性质，这是导致具有HfO2介电介质的[010]-和[100]取向β-Ga2O3沟槽mos型肖特基势垒二极管（沟槽- mossbds）的反向I-V特性的独特“V”形温度依赖性的原因。在低温范围内（25-125°C），[100]取向海沟- mossbd的“V”形行为源于慢速和快速界面态电荷捕获/释放过程之间的温度依赖竞争，而[010]取向海沟- mossbd的相反特征主要由快速界面态控制。这些发现为各向异性β-Ga2O3沟槽结构的界面态工程提供了重要的物理见解，并为高性能β-Ga2O3沟槽功率器件的电热协同设计提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.