Experimental and design space exploration of ultra-low threshold hybrid III–V/Si quantum dot microring lasers

Abstract

In this work, we report on the design strategies and experimental validation of ultra-low threshold (<0.8   mA ) hybrid III–V/Si quantum dot (InAs/GaAs) microring lasers with optical output powers >2   mW (at 10°C) for 1.3 μm emission. The multi-dimensional design exploration allows for the demonstration of record wall-plug efficiencies (∼10 % ) and threshold current densities (109  A/ cm 2 ) among electrically driven, silicon-waveguide-coupled microring lasers. We also demonstrate the thermal performance of several designs with record characteristic temperature values of T 0 =212  K, indicating minimal temperature dependence of the threshold current. In addition, the high differential gain allows for the demonstration of 3 dB bandwidths up to 5 GHz.