H. Naskath Sithara,E. Vinoth,R. Abimaheshwari,M. Navaneethan,J. Archana
{"title":"Tensile-strain-engineered electron–phonon coupling for high-performance\n n\n -MoS2/\n p\n -Si photodetector","authors":"H. Naskath Sithara,E. Vinoth,R. Abimaheshwari,M. Navaneethan,J. Archana","doi":"10.1063/5.0333804","DOIUrl":null,"url":null,"abstract":"Strain induced in multilayered molybdenum disulfide (MoS2) opens a new avenue for carrier dynamics, enabling the development of high-performance optoelectronic devices, including photodetectors. The strong electron–phonon coupling (EPC) can be effectively modulated through intercalation-induced strain engineering. Ion exchange between the intercalant and MoS2 leads to interlayer expansion and lattice distortion, providing an effective route to modulate strain. Hence, here, alkali ion (Mg2+) was initially intercalated in the precursor and subsequently grown on p-Si to n-MoS2/p-Si photodetector, facilitating efficient charge transfer. The redshift of E2g1 and A1g Raman modes in n-MoS2/p-Si indicated the presence of tensile strain, which weakens the EPC in the intercalated MoS2 layer. This strain-induced suppression of the EPC enhances the carrier mobility by approximately 2.6 times and reduces the carrier transit time to about one-fourth of that in the pristine structure. These synergic characteristics make n-MoS2/p-Si an excellent photodetector with fast response and good recovery of 0.9 s (photocyclability) over five cycles and good responsivity of 0.31 A/W. In addition to this, the external quantum efficiency of about 37% is observed for the fabricated photodetector.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":3.8000,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0333804","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Strain induced in multilayered molybdenum disulfide (MoS2) opens a new avenue for carrier dynamics, enabling the development of high-performance optoelectronic devices, including photodetectors. The strong electron–phonon coupling (EPC) can be effectively modulated through intercalation-induced strain engineering. Ion exchange between the intercalant and MoS2 leads to interlayer expansion and lattice distortion, providing an effective route to modulate strain. Hence, here, alkali ion (Mg2+) was initially intercalated in the precursor and subsequently grown on p-Si to n-MoS2/p-Si photodetector, facilitating efficient charge transfer. The redshift of E2g1 and A1g Raman modes in n-MoS2/p-Si indicated the presence of tensile strain, which weakens the EPC in the intercalated MoS2 layer. This strain-induced suppression of the EPC enhances the carrier mobility by approximately 2.6 times and reduces the carrier transit time to about one-fourth of that in the pristine structure. These synergic characteristics make n-MoS2/p-Si an excellent photodetector with fast response and good recovery of 0.9 s (photocyclability) over five cycles and good responsivity of 0.31 A/W. In addition to this, the external quantum efficiency of about 37% is observed for the fabricated photodetector.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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