{"title":"Displacement Damage Equivalence in SiGe HBTs: Is the NIEL Method Applicable?","authors":"Huimin Geng, Fengkai Liu, Jianqun Yang, Zhongli Liu, Wenzhu Shao, Xingji Li","doi":"10.1016/j.radphyschem.2026.114525","DOIUrl":null,"url":null,"abstract":"This paper investigates the effects of heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs), with a focus on analyzing the equivalence of displacement damage induced by different heavy ions in the devices. We conducted irradiation experiments using silicon, chlorine and oxygen ions with different energies. By calculating the linear energy transfer (LET) and non-ionizing energy loss (NIEL), the ionization and displacement damage capabilities of various incident ions were determined. Subsequently, we normalized the effects of heavy ion irradiation by examining the excess base current (Δ<ce:italic>I</ce:italic><ce:inf loc=\"post\">B</ce:inf>) under both forward and inverse operation modes. The results demonstrate that, based on the NIEL method, the inverse Δ<ce:italic>I</ce:italic><ce:inf loc=\"post\">B</ce:inf> can serve as a reliable metric for normalizing the impact across varying ions. This study reveals that the forward Δ(1/<ce:italic>β</ce:italic>) normalization metric commonly used in conventional bipolar devices has application limitations in SiGe HBTs, and innovatively proposes the inverse Δ<ce:italic>I</ce:italic><ce:inf loc=\"post\">B</ce:inf> as an evaluation metric, which can achieve better normalization. This provides guidance for the research on radiation damage equivalence in SiGe HBTs.","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"118 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1016/j.radphyschem.2026.114525","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This paper investigates the effects of heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs), with a focus on analyzing the equivalence of displacement damage induced by different heavy ions in the devices. We conducted irradiation experiments using silicon, chlorine and oxygen ions with different energies. By calculating the linear energy transfer (LET) and non-ionizing energy loss (NIEL), the ionization and displacement damage capabilities of various incident ions were determined. Subsequently, we normalized the effects of heavy ion irradiation by examining the excess base current (ΔIB) under both forward and inverse operation modes. The results demonstrate that, based on the NIEL method, the inverse ΔIB can serve as a reliable metric for normalizing the impact across varying ions. This study reveals that the forward Δ(1/β) normalization metric commonly used in conventional bipolar devices has application limitations in SiGe HBTs, and innovatively proposes the inverse ΔIB as an evaluation metric, which can achieve better normalization. This provides guidance for the research on radiation damage equivalence in SiGe HBTs.
期刊介绍:
Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing.
The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.