Displacement Damage Equivalence in SiGe HBTs: Is the NIEL Method Applicable?

IF 3.5 3区 物理与天体物理 Q3 CHEMISTRY, PHYSICAL
Huimin Geng, Fengkai Liu, Jianqun Yang, Zhongli Liu, Wenzhu Shao, Xingji Li
{"title":"Displacement Damage Equivalence in SiGe HBTs: Is the NIEL Method Applicable?","authors":"Huimin Geng, Fengkai Liu, Jianqun Yang, Zhongli Liu, Wenzhu Shao, Xingji Li","doi":"10.1016/j.radphyschem.2026.114525","DOIUrl":null,"url":null,"abstract":"This paper investigates the effects of heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs), with a focus on analyzing the equivalence of displacement damage induced by different heavy ions in the devices. We conducted irradiation experiments using silicon, chlorine and oxygen ions with different energies. By calculating the linear energy transfer (LET) and non-ionizing energy loss (NIEL), the ionization and displacement damage capabilities of various incident ions were determined. Subsequently, we normalized the effects of heavy ion irradiation by examining the excess base current (Δ<ce:italic>I</ce:italic><ce:inf loc=\"post\">B</ce:inf>) under both forward and inverse operation modes. The results demonstrate that, based on the NIEL method, the inverse Δ<ce:italic>I</ce:italic><ce:inf loc=\"post\">B</ce:inf> can serve as a reliable metric for normalizing the impact across varying ions. This study reveals that the forward Δ(1/<ce:italic>β</ce:italic>) normalization metric commonly used in conventional bipolar devices has application limitations in SiGe HBTs, and innovatively proposes the inverse Δ<ce:italic>I</ce:italic><ce:inf loc=\"post\">B</ce:inf> as an evaluation metric, which can achieve better normalization. This provides guidance for the research on radiation damage equivalence in SiGe HBTs.","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"118 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1016/j.radphyschem.2026.114525","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

This paper investigates the effects of heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs), with a focus on analyzing the equivalence of displacement damage induced by different heavy ions in the devices. We conducted irradiation experiments using silicon, chlorine and oxygen ions with different energies. By calculating the linear energy transfer (LET) and non-ionizing energy loss (NIEL), the ionization and displacement damage capabilities of various incident ions were determined. Subsequently, we normalized the effects of heavy ion irradiation by examining the excess base current (ΔIB) under both forward and inverse operation modes. The results demonstrate that, based on the NIEL method, the inverse ΔIB can serve as a reliable metric for normalizing the impact across varying ions. This study reveals that the forward Δ(1/β) normalization metric commonly used in conventional bipolar devices has application limitations in SiGe HBTs, and innovatively proposes the inverse ΔIB as an evaluation metric, which can achieve better normalization. This provides guidance for the research on radiation damage equivalence in SiGe HBTs.
位移损伤等效:NIEL方法是否适用?
研究了重离子辐照对硅锗异质结双极晶体管(SiGe HBTs)的影响,重点分析了不同重离子对器件位移损伤的等效性。我们用不同能量的硅离子、氯离子和氧离子进行辐照实验。通过计算线性能量传递(LET)和非电离能量损失(NIEL),确定了不同入射离子的电离和位移损伤能力。随后,我们通过检查正反两种操作模式下的过量基极电流(ΔIB),将重离子辐照的影响归一化。结果表明,基于NIEL方法,反演ΔIB可以作为一种可靠的指标,用于归一化不同离子的影响。本研究揭示了传统双极器件中常用的正向Δ(1/β)归一化指标在SiGe hbt中存在应用局限性,创新性地提出了反向ΔIB作为评价指标,可以实现更好的归一化。这为SiGe HBTs辐射损伤等效的研究提供了指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Radiation Physics and Chemistry
Radiation Physics and Chemistry 化学-核科学技术
CiteScore
5.60
自引率
17.20%
发文量
574
审稿时长
12 weeks
期刊介绍: Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing. The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书