Sulfur-source-regulated BiVO4/SnS2/Bi2S3 ternary heterojunctions for synergistic TC-Cr(VI) removal: Experimental and DFT mechanistic insights

IF 6.6 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Pengyu Zhang, Jinping Zhang, Zihao Xie, Yake Wang, Tong Zhang, Yunchao Mu, Joshi Mahesh Kumar, Xinli Li
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引用次数: 0

Abstract

The coexistence of tetracycline (TC) and hexavalent chromium (Cr(VI)) in water creates a typical refractory combined pollution, whereas single photocatalysts are limited by severe carrier recombination, narrow spectral response and poor simultaneous removal capability. Herein, a series of BiVO4/SnS2/Bi2S3 ternary heterojunction photocatalysts were synthesized via a two-step hydrothermal method using four sulfur sources (Na2S·9H2O, L-cysteine, thiourea and thioacetamide) to regulate Bi2S3 in-situ growth. The effects of sulfur source on morphology, structure, optical properties and photoelectrochemical performance were systematically studied, alongside the photocatalytic activity for single pollutant and mixed TC-Cr(VI) pollutants. XRD, SEM, TEM and XPS confirmed successful heterojunction formation, with sulfur source significantly affecting Bi2S3 nucleation morphology and interfacial contact. The morphologies of Bi2S3 varied significantly with the sulfur source, from a complete film coating (BSS-Na2S with Na2S·9H2O), small nanoparticles (BSS-C3H7NO2S with L-cysteine) and aggregated nanoparticles (BSS-CH4N2S with thiourea), to uniformly dispersed elongated whiskers (BSS-C2H5NS with thioacetamide), with the former exhibiting the smallest specific surface area. BSS-C2H5NS extended the visible-light absorption to the near-infrared region with a narrowed bandgap of 2.04 eV. Photoelectrochemical tests showed that BSS-C2H5NS possessed the highest capacitance (15.34 mF/cm2), longest carrier lifetime, smallest Nyquist arc and lowest Mott-Schottky slope, indicating optimal carrier separation and transport. In mixed TC-Cr(VI) system, BSS-C2H5NS achieved 100 % Cr(VI) reduction (60 min) and 80.9 % TC degradation (100 min), with good stability over four cycles. DFT calculations combined with EPR analysis, confirm that the work function gradient (BiVO4 < SnS2 < Bi2S3) drives the formation of a built-in electric field at the heterojunction interface, establishing a Type-II charge transfer pathway that enables stepwise directional migration of photogenerated electrons and spatial charge separation. The accumulated electrons reduce Cr(VI), while the holes oxidize TC, and this synergistic effect substantially suppresses electron-hole recombination. This work establishes the “sulfur source-microstructure-performance” relationship, offering a rational strategy for designing multi-sulfide heterojunctions toward combined wastewater treatment.
硫源调控的BiVO4/SnS2/Bi2S3三元异质结协同去除TC-Cr(VI):实验和DFT机制的见解
四环素(TC)和六价铬(Cr(VI))在水中共存是典型的难降解复合污染,而单一光催化剂受载流子复合严重、光谱响应窄、同时去除能力差的限制。本文以Na2S·9H2O、l -半胱氨酸、硫脲和硫乙酰胺为硫源,采用两步水热法制备了BiVO4/SnS2/Bi2S3三元异质结光催化剂,以调节Bi2S3的原位生长。系统研究了硫源对材料形貌、结构、光学性质和光电化学性能的影响,以及对单一污染物和TC-Cr(VI)混合污染物的光催化活性。XRD、SEM、TEM和XPS证实异质结成功形成,硫源对Bi2S3成核形貌和界面接触有显著影响。不同硫源的Bi2S3的形貌变化显著,从完整的薄膜涂层(含Na2S·9H2O的BSS-Na2S)、小颗粒颗粒(含l -半胱氨酸的BSS-C3H7NO2S)和聚集的纳米颗粒(含硫脲的BSS-CH4N2S)到均匀分散的细长晶须(含硫乙酰胺的BSS-C2H5NS),其中前者的比表面积最小。BSS-C2H5NS将可见光吸收扩展到近红外区域,带隙变窄至2.04 eV。光电化学测试表明,BSS-C2H5NS具有最高的电容量(15.34 mF/cm2)、最长的载流子寿命、最小的Nyquist弧和最低的Mott-Schottky斜率,表明其具有最佳的载流子分离和输运能力。在混合TC-Cr(VI)体系中,BSS-C2H5NS实现了100%的Cr(VI)还原(60 min)和80.9%的TC降解(100 min),并且在4个循环中具有良好的稳定性。DFT计算结合EPR分析,证实了功函数梯度(BiVO4 < SnS2 < Bi2S3)驱动异质结界面形成内置电场,建立了ii型电荷转移途径,实现了光电子的逐步定向迁移和空间电荷分离。积累的电子还原Cr(VI),空穴氧化TC,这种协同效应实质上抑制了电子-空穴复合。本研究建立了“硫源-微观结构-性能”关系,为设计多硫化物异质结组合处理废水提供了合理的策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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