Fabrication and Characterization of CdTe-Doped SnO2 Thin Films Deposited by Pulsed Laser Deposition: Structural, Optical, Morphological, and Electrical Properties

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
Mustafa Basil Hayawi, Qasim Hammadi Mahmoud
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引用次数: 0

Abstract

This study fabricated SnO2 thin films doped with CdTe using pulsed laser deposition under vacuum. The influence of CdTe doping on structural, morphological, optical, and electrical properties was evaluated. X‑ray diffraction confirmed polycrystalline tetragonal SnO2 with preferred (110) orientation, while the higher (20–40%) CdTe content produced additional peaks relating to CdTe phases. The crystallite size ranged from 29.8 to 33.8 nm, depending on the dopant concentration. SEM images showed irregular, mainly spherical grains with no major morphological change after doping. UV–Vis results indicated a reduced bandgap from 2.799 to 2.111 eV. I–V characteristics improved significantly, with the current increasing from 1.209·10−6 A (pure SnO2) to 3.56·10−3 A (20% CdTe) at 100 mW.

脉冲激光沉积掺杂碲化锡薄膜的制备和表征:结构、光学、形态和电学性质
本研究采用脉冲激光真空沉积法制备了掺杂CdTe的SnO2薄膜。研究了碲化镉掺杂对材料结构、形貌、光学和电学性能的影响。X射线衍射证实了优选(110)取向的多晶四方SnO2,而较高(20-40%)的CdTe含量产生了与CdTe相相关的附加峰。晶粒尺寸随掺杂浓度的变化范围为29.8 ~ 33.8 nm。SEM图像显示,掺杂后颗粒呈不规则状,主要为球形,没有明显的形态变化。UV-Vis结果表明,带隙从2.799 eV减小到2.111 eV。在100 mW时,电流从1.209·10−6 A(纯SnO2)增加到3.56·10−3 A (20% CdTe), I-V特性得到了显著改善。
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来源期刊
Russian Physics Journal
Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.00
自引率
50.00%
发文量
208
审稿时长
3-6 weeks
期刊介绍: Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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