Roman A. Babunts, Marina V. Muzafarova, Nikolai G. Romanov, Pavel G. Baranov
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引用次数: 0
Abstract
The article summarizes the results of observation of cross-relaxation resonances discovered during studies of optically detected magnetic resonance in dielectric and semiconductor crystals conducted at the Ioffe Institute. The following phenomena are considered: cross-relaxation between optically pumped F-centers and impurity defects in irradiated crystals of alkali halides doped with thallium and indium, detected by monitoring magnetic circular dichroism in the absorption of F-centers; the Ce3+—Gd3+ cross-relaxation registered via the luminescence of Ce3+ in garnet crystals co-doped with cerium and gadolinium; cross-relaxation in the photoluminescence of localized heavy-hole excitons in GaAs/AlAs superlattices; cross-relaxation between NV centers and loosely coupled pairs of substitutional nitrogen atoms in diamond, and cross-relaxation between optically active S = 3/2 vacancy centers and other defects in silicon carbide.
期刊介绍：
Applied Magnetic Resonance provides an international forum for the application of magnetic resonance in physics, chemistry, biology, medicine, geochemistry, ecology, engineering, and related fields.
The contents include articles with a strong emphasis on new applications, and on new experimental methods. Additional features include book reviews and Letters to the Editor.
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