Pressure-induced structural evolutions and electronic properties of Eu3+ and Pr3+ doped yttrium oxide crystals: a comparative study.

IF 3.3 3区 化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR
Xinyu Lv, Ruiqi Xiong, Meng Ju, Mingmin Zhong, Peng Wang, Yang Xiao, Weiguo Sun, Yuanyuan Jin, Chuanzhao Zhang
{"title":"Pressure-induced structural evolutions and electronic properties of Eu<sup>3+</sup> and Pr<sup>3+</sup> doped yttrium oxide crystals: a comparative study.","authors":"Xinyu Lv, Ruiqi Xiong, Meng Ju, Mingmin Zhong, Peng Wang, Yang Xiao, Weiguo Sun, Yuanyuan Jin, Chuanzhao Zhang","doi":"10.1039/d6dt02053d","DOIUrl":null,"url":null,"abstract":"<p><p>Rare-earth-doped yttrium oxide (Y<sub>2</sub>O<sub>3</sub>) is a promising optoelectronic material due to its outstanding optical characteristics, including the efficient red emission of Eu<sup>3+</sup> and the lattice-sensitive luminescence of Pr<sup>3+</sup>. The crystal lattice and structural information have aroused widespread interest. However, clarifying the structural evolution and local structures in doped systems under high pressure remains challenging. In this work, we systematically investigate the structural evolution and electronic properties of Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> and Y<sub>2</sub>O<sub>3</sub>:Pr<sup>3+</sup> under the pressure range of 0-40 GPa. The ground-state structures are identified for the first time. Eu<sup>3+</sup> and Pr<sup>3+</sup> substitute Y<sup>3+</sup> sites with a doping concentration of 3.125%. At ambient pressure, the structure of Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> exhibits a trigonal structure with the <i>R</i>3̄ space group while Y<sub>2</sub>O<sub>3</sub>:Pr<sup>3+</sup> exhibits a monoclinic configuration with the <i>P</i>2 space group. LDA + U + SOC calculations reveal narrowed band gaps of 1.884 and 3.326 eV for Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> and Y<sub>2</sub>O<sub>3</sub>:Pr<sup>3+</sup>, respectively, indicating an insulator-to-semiconductor transition. Under pressure, Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> shows higher sensitivity in lattice and electronic properties than Y<sub>2</sub>O<sub>3</sub>:Pr<sup>3+</sup>. Pressure enhances intrinsic 4f-electron differences, leading to divergent evolution trends. The 4f configuration serves as a key controller of high-pressure behavior. These findings could not only provide important information for further investigations of rare-earth-doped systems, but also help to gain more insights into designing a new generation of laser materials under extreme conditions.</p>","PeriodicalId":71,"journal":{"name":"Dalton Transactions","volume":" ","pages":"13829-13838"},"PeriodicalIF":3.3000,"publicationDate":"2026-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Dalton Transactions","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d6dt02053d","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0

Abstract

Rare-earth-doped yttrium oxide (Y2O3) is a promising optoelectronic material due to its outstanding optical characteristics, including the efficient red emission of Eu3+ and the lattice-sensitive luminescence of Pr3+. The crystal lattice and structural information have aroused widespread interest. However, clarifying the structural evolution and local structures in doped systems under high pressure remains challenging. In this work, we systematically investigate the structural evolution and electronic properties of Y2O3:Eu3+ and Y2O3:Pr3+ under the pressure range of 0-40 GPa. The ground-state structures are identified for the first time. Eu3+ and Pr3+ substitute Y3+ sites with a doping concentration of 3.125%. At ambient pressure, the structure of Y2O3:Eu3+ exhibits a trigonal structure with the R3̄ space group while Y2O3:Pr3+ exhibits a monoclinic configuration with the P2 space group. LDA + U + SOC calculations reveal narrowed band gaps of 1.884 and 3.326 eV for Y2O3:Eu3+ and Y2O3:Pr3+, respectively, indicating an insulator-to-semiconductor transition. Under pressure, Y2O3:Eu3+ shows higher sensitivity in lattice and electronic properties than Y2O3:Pr3+. Pressure enhances intrinsic 4f-electron differences, leading to divergent evolution trends. The 4f configuration serves as a key controller of high-pressure behavior. These findings could not only provide important information for further investigations of rare-earth-doped systems, but also help to gain more insights into designing a new generation of laser materials under extreme conditions.

Eu3+和Pr3+掺杂氧化钇晶体的压力诱导结构演变和电子性能的比较研究。
稀土掺杂氧化钇(Y2O3)由于其优异的光学特性,包括Eu3+的高效红光发射和Pr3+的晶格敏感发光,是一种很有前途的光电材料。晶体的晶格和结构信息引起了广泛的兴趣。然而,阐明高压下掺杂体系的结构演变和局部结构仍然具有挑战性。本文系统地研究了Y2O3:Eu3+和Y2O3:Pr3+在0-40 GPa压力范围内的结构演变和电子性能。首次确定了其基态结构。Eu3+和Pr3+取代Y3+,掺杂浓度为3.125%。在常压下,Y2O3:Eu3+的结构呈现出具有R3空间群的三角结构,而Y2O3:Pr3+的结构呈现出具有P2空间群的单斜结构。LDA + U + SOC计算表明,Y2O3:Eu3+和Y2O3:Pr3+的带隙分别为1.884和3.326 eV,表明绝缘体到半导体的转变。在压力下,Y2O3:Eu3+在晶格和电子性能上比Y2O3:Pr3+表现出更高的灵敏度。压力增大了内在的4f电子差,导致了不同的演化趋势。4f配置是高压行为的关键控制器。这些发现不仅可以为进一步研究稀土掺杂系统提供重要信息,而且有助于在极端条件下设计新一代激光材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Dalton Transactions
Dalton Transactions 化学-无机化学与核化学
CiteScore
6.60
自引率
7.50%
发文量
1832
审稿时长
1.5 months
期刊介绍: Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书