Tuning the optoelectronic properties of MASnI3 perovskite via Br and Cl doping and Br/Cl co-doping: a first principles DFT study

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Abdelmounaim Laassouli, Abdelhafid Najim, Lhouceine Moulaoui, Anass Bakour, Omar Bajjou
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引用次数: 0

Abstract

Lead-free tin-based halide perovskites are promising light-absorbing materials for photovoltaic and optoelectronic applications, but their electronic structures and optical responses require further optimization. Using first-principles density functional theory (DFT) calculations performed with the CASTEP code, employing the GGA-PBE exchange-correlation functional, on-the-fly generated ultrasoft pseudopotentials, a 550 eV plane-wave cutoff, and a 2 × 4 × 2 Gamma-centered Monkhorst-Pack k-point mesh, this work systematically investigates the effect of Br and Cl substitution on the electronic and optical properties of CH3NH3SnI3 (MASnI3). Pristine, Br-doped, Cl-doped, and Br/Cl co-doped MASnI3 are found to exhibit direct band gaps of 1.055, 0.675, 0.714, and 0.722 eV, respectively. The total and partial densities of states show that substitution of I by Br and Cl redistributes the electronic states and modifies the orbital contributions near the band edges. Br and Cl incorporation also shifts the principal optical response toward longer wavelengths, reduces the ultraviolet response, and enhances absorption in the visible region, with consistent changes observed in the dielectric function, complex refractive index, optical conductivity, and energy-loss function. These results indicate that Br and Cl substitution is an effective strategy for tuning the optoelectronic properties of MASnI3, supporting its further evaluation as a lead-free absorber material for photovoltaic and photodetector applications.

通过Br和Cl掺杂和Br/Cl共掺杂调整MASnI3钙钛矿的光电性能:第一性原理DFT研究
无铅锡基卤化物钙钛矿是一种很有前途的光伏光电吸光材料,但其电子结构和光响应有待进一步优化。利用CASTEP代码执行的第一性原理密度泛函(DFT)计算,采用GGA-PBE交换相关泛函,动态生成超软赝势,550 eV平面波截断和2 × 4 × 2 γ中心Monkhorst-Pack k点网格,本工作系统地研究了Br和Cl取代对CH3NH3SnI3 (MASnI3)电子和光学性质的影响。未掺杂、Br掺杂、Cl掺杂和Br/Cl共掺杂的MASnI3的直接带隙分别为1.055、0.675、0.714和0.722 eV。态的总密度和部分密度表明,用Br和Cl取代I重新分配了电子态,并改变了带边缘附近的轨道贡献。Br和Cl的掺入也使主光学响应向长波方向移动,降低了紫外响应,增强了可见光区的吸收,并且在介电函数、复折射率、光学电导率和能量损失函数中观察到一致的变化。这些结果表明,Br和Cl取代是调整MASnI3光电性能的有效策略,支持其作为光伏和光电探测器应用的无铅吸收材料的进一步评估。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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