{"title":"Tuning the optoelectronic properties of MASnI3 perovskite via Br and Cl doping and Br/Cl co-doping: a first principles DFT study","authors":"Abdelmounaim Laassouli, Abdelhafid Najim, Lhouceine Moulaoui, Anass Bakour, Omar Bajjou","doi":"10.1007/s11082-026-09156-w","DOIUrl":null,"url":null,"abstract":"<div><p>Lead-free tin-based halide perovskites are promising light-absorbing materials for photovoltaic and optoelectronic applications, but their electronic structures and optical responses require further optimization. Using first-principles density functional theory (DFT) calculations performed with the CASTEP code, employing the GGA-PBE exchange-correlation functional, on-the-fly generated ultrasoft pseudopotentials, a 550 eV plane-wave cutoff, and a 2 × 4 × 2 Gamma-centered Monkhorst-Pack k-point mesh, this work systematically investigates the effect of Br and Cl substitution on the electronic and optical properties of CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> (MASnI<sub>3</sub>). Pristine, Br-doped, Cl-doped, and Br/Cl co-doped MASnI<sub>3</sub> are found to exhibit direct band gaps of 1.055, 0.675, 0.714, and 0.722 eV, respectively. The total and partial densities of states show that substitution of I by Br and Cl redistributes the electronic states and modifies the orbital contributions near the band edges. Br and Cl incorporation also shifts the principal optical response toward longer wavelengths, reduces the ultraviolet response, and enhances absorption in the visible region, with consistent changes observed in the dielectric function, complex refractive index, optical conductivity, and energy-loss function. These results indicate that Br and Cl substitution is an effective strategy for tuning the optoelectronic properties of MASnI<sub>3</sub>, supporting its further evaluation as a lead-free absorber material for photovoltaic and photodetector applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2026-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-026-09156-w","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Lead-free tin-based halide perovskites are promising light-absorbing materials for photovoltaic and optoelectronic applications, but their electronic structures and optical responses require further optimization. Using first-principles density functional theory (DFT) calculations performed with the CASTEP code, employing the GGA-PBE exchange-correlation functional, on-the-fly generated ultrasoft pseudopotentials, a 550 eV plane-wave cutoff, and a 2 × 4 × 2 Gamma-centered Monkhorst-Pack k-point mesh, this work systematically investigates the effect of Br and Cl substitution on the electronic and optical properties of CH3NH3SnI3 (MASnI3). Pristine, Br-doped, Cl-doped, and Br/Cl co-doped MASnI3 are found to exhibit direct band gaps of 1.055, 0.675, 0.714, and 0.722 eV, respectively. The total and partial densities of states show that substitution of I by Br and Cl redistributes the electronic states and modifies the orbital contributions near the band edges. Br and Cl incorporation also shifts the principal optical response toward longer wavelengths, reduces the ultraviolet response, and enhances absorption in the visible region, with consistent changes observed in the dielectric function, complex refractive index, optical conductivity, and energy-loss function. These results indicate that Br and Cl substitution is an effective strategy for tuning the optoelectronic properties of MASnI3, supporting its further evaluation as a lead-free absorber material for photovoltaic and photodetector applications.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.