Synthesis and TD-DFT investigation on optoelectronic properties of bis-boron/nitrogen-doped azaullazines as organic light-emitting diodes (OLEDs)

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Nosrat Madadi Mahani, Fatemeh Mostaghni
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引用次数: 0

Abstract

This study explores the synthesis and the optoelectronic, electrochemical, and charge transport properties of dual Boron/Nitrogen-doped azaullazine (ZAU) derivatives using time dependent-density functional theory (TD-DFT). These derivatives are being developed for next-generation organic electronics. Quantum chemical simulations indicate that this change lowers LUMO level, reducing the electronic bandgap from 4.42 eV in ZAU1 to 4.05 eV in ZAU3. While HOMO remains in the central rigid core for both molecules, ZAU3’s LUMO shifts to the ester arms, significantly altering the spatial structure. This reduces the electron exchange integral, establishing conditions for a small singlet-triplet energy gap in thermally activated delayed fluorescence (TADF) host architectures. However, this change decreases the vertical transition probability (f = 0.0653; LHE = 14.0%) compared to ZAU1 (f = 0.1095; LHE = 22.3%). Analysis using Marcus electron-transfer theory shows that ZAU3 achieves better charge-transport kinetics in the solid-state, with low hole and electron reorganization energies by limiting structural relaxation. Moreover, ester functionalization alters the adiabatic ionization potential (IPa = 5.86 eV) and electron affinity (EAa = 1.79 eV), reducing interfacial injection barriers. Molecular electrostatic potential (MEP) surfaces reveal a substantial increase in ZAU3’s permanent dipole moment (3.87 D vs. 1.62 D for ZAU1). Additionally, 2D Reduced Density Gradient (RDG) and Non-Covalent Interaction (NCI) plots verify that the extended molecular structures are stabilized by widespread weak van der Waals interactions. This intricate balance between spatial orbital separation and internal reorganization is crucial, positioning ZAU1 as ideal for emissive layers or light harvesting. At the same time, ZAU3 is suitable as a high-mobility charge-transport matrix or ambipolar interlayer and a potential TADF host. This research provides valuable insights into the design principles of heteroatom-doped luminescent materials and makes a significant contribution to the development of OLED materials.

双硼/氮掺杂氮唑嗪有机发光二极管的合成及光电性能的TD-DFT研究
本研究利用时间依赖密度泛函理论(TD-DFT)研究了双硼/氮掺杂氮氮嗪(ZAU)衍生物的合成及其光电、电化学和电荷输运性质。这些衍生品正在为下一代有机电子产品开发。量子化学模拟表明,这种变化降低了LUMO能级,使电子带隙从ZAU1的4.42 eV减小到ZAU3的4.05 eV。两个分子的HOMO都保持在中心刚性核中,而ZAU3的LUMO转移到酯臂上,显著改变了空间结构。这降低了电子交换积分,为热激活延迟荧光(TADF)宿主结构中的小单重态-三重态能隙建立了条件。但是,与ZAU1 (f = 0.1095; LHE = 22.3%)相比,这种变化降低了垂直转移概率(f = 0.0653; LHE = 14.0%)。利用Marcus电子转移理论分析表明,ZAU3通过限制结构弛豫,具有较低的空穴和电子重组能,在固态中具有较好的电荷输运动力学。此外,酯功能化改变了绝热电离势(IPa = 5.86 eV)和电子亲和势(EAa = 1.79 eV),降低了界面注入势垒。分子静电电位(MEP)表面显示ZAU3的永久偶极矩显著增加(3.87 D比1.62 D)。此外,二维降低密度梯度(RDG)和非共价相互作用(NCI)图验证了扩展的分子结构在广泛的弱范德华相互作用下是稳定的。空间轨道分离和内部重组之间的复杂平衡至关重要,使ZAU1成为发射层或光收集的理想选择。同时,ZAU3适合作为高迁移率电荷输运矩阵或双极性间层和潜在的TADF宿主。该研究为杂原子掺杂发光材料的设计原理提供了有价值的见解,并对OLED材料的发展做出了重大贡献。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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