Thermal Diffusion of Copper into Chromium Disilicide

IF 0.5 4区材料科学 Q4 CRYSTALLOGRAPHY

Crystallography Reports Pub Date : 2026-09-14 DOI:10.1134/S1063774526601371

M. S. Lukasov, F. Yu. Solomkin, N. V. Sharenkova, S. V. Novikov, V. V. Klechkovskaya

引用次数: 0

Abstract

The microstructure, elemental and phase composition of the interface zone between chromium disilicide and copper were studied on three samples: when copper was chemically deposited on CrSi₂ and when samples were obtained by fusing single-crystal and briquetted CrSi₂ into copper.

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铜在二硅化铬中的热扩散

研究了化学沉积在CrSi2上的铜和单晶、压块熔接在铜上的CrSi2样品的微观结构、二硅化铬与铜界面区的元素组成和相组成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Crystallography Reports 化学-晶体学

CiteScore

1.10

自引率

28.60%

发文量

审稿时长

4-8 weeks

期刊介绍： Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.