{"title":"A 2 × 2 240--270-GHz Transmitter Array With 33 dBm of EIRP in a 0.13-μm SiGe Technology","authors":"Kaan Balaban;Max Vöhringer;Matthias Möck;Marius Kretschmann;Thomas Zwick;John Jelonnek;Ahmet Çağrı Ulusoy","doi":"10.1109/TMTT.2026.3711721","DOIUrl":null,"url":null,"abstract":"This work presents a 240–270-GHz transmitter array implemented in a 0.13-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m SiGe BiCMOS process. The transmitter array comprises two J-band <inline-formula> <tex-math>$\\times 6$ </tex-math></inline-formula> frequency multipliers, four J-band four-way combined power amplifiers (PAs), and an on-chip <inline-formula> <tex-math>$2 \\times 2$ </tex-math></inline-formula> antenna array. The system is driven by an external continuous-wave (CW) signal generator, and each four-way combined PA delivers a peak output power of 16.7 dBm at 250 GHz with a 3-dB bandwidth of 50 GHz. The integrated antenna array consists of four differential dipoles with a reflector layer beneath the silicon substrate to enhance radiation efficiency. The fabricated transmitter array achieves an equivalent isotropically radiated power (EIRP) of 33 dBm and estimated total radiated power (<inline-formula> <tex-math>$\\boldsymbol {P_{\\mathrm {tot, rad}}}$ </tex-math></inline-formula>) of 21 dBm at 264 GHz with a 3-dB bandwidth of 30 GHz while consuming 4 W of DC power and occupying a silicon area of 13 mm<sup>2</sup>. Compared to prior works at similar frequencies, the proposed transmitter array achieves a 9-dB higher EIRP than previously reported silicon-based transmitters without the use of external lens-based gain enhancement.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 9","pages":"8153-8162"},"PeriodicalIF":5.2000,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11616577","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11616577/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/7/21 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a 240–270-GHz transmitter array implemented in a 0.13-$\mu $ m SiGe BiCMOS process. The transmitter array comprises two J-band $\times 6$ frequency multipliers, four J-band four-way combined power amplifiers (PAs), and an on-chip $2 \times 2$ antenna array. The system is driven by an external continuous-wave (CW) signal generator, and each four-way combined PA delivers a peak output power of 16.7 dBm at 250 GHz with a 3-dB bandwidth of 50 GHz. The integrated antenna array consists of four differential dipoles with a reflector layer beneath the silicon substrate to enhance radiation efficiency. The fabricated transmitter array achieves an equivalent isotropically radiated power (EIRP) of 33 dBm and estimated total radiated power ($\boldsymbol {P_{\mathrm {tot, rad}}}$ ) of 21 dBm at 264 GHz with a 3-dB bandwidth of 30 GHz while consuming 4 W of DC power and occupying a silicon area of 13 mm2. Compared to prior works at similar frequencies, the proposed transmitter array achieves a 9-dB higher EIRP than previously reported silicon-based transmitters without the use of external lens-based gain enhancement.
期刊介绍:
The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.