N. G. Koudafokê, Thierry Njougouo, Hilda A. Cerdeira, C. H. Miwadinou
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引用次数: 0
Abstract
This work presents the mathematical modeling and numerical characterization of a Micro-Electro-Mechanical System (MEMS) integrating an HP memristor coupled to electrical and mechanical resonators. Based on the linear-drift HP memristor model, the nonlinear electromechanical dynamics are investigated through Lyapunov exponents, bifurcation diagrams, Poincaré sections, recurrence plots, phase portraits, and Fourier spectra. The numerical results demonstrate that the intrinsic memristor parameters, namely the low-resistance state \(R_{on}\), the high-resistance state \(R_{off}\), the oxide thickness D, and the ionic mobility \(\mu _{v}\), directly control the amplitude, frequency content, and dynamical regime of the electromechanical oscillations, inducing transitions between quasi-periodic and chaotic behaviors. Temperature-dependent variations of these memristive parameters are shown to modulate both the oscillation amplitudes and the distribution of quasi-periodic and chaotic regimes, highlighting the thermo-sensitive character of the proposed architecture. A qualitative comparison with Josephson-junction-based MEMS is provided, emphasizing that the HP memristor exhibits similar nonlinear dynamical features while remaining fully operational at room temperature. These results suggest that memristive thermo-sensitive MEMS constitute a promising platform for adaptive nonlinear oscillators, thermo-sensitive sensing devices, and chaos-assisted electromechanical applications.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.