Characterization of quasi-periodic and chaotic dynamics in a memristive MEMS: parameter-induced transitions and thermo-sensitive modulation

IF 2.8 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
N. G. Koudafokê, Thierry Njougouo, Hilda A. Cerdeira, C. H. Miwadinou
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引用次数: 0

Abstract

This work presents the mathematical modeling and numerical characterization of a Micro-Electro-Mechanical System (MEMS) integrating an HP memristor coupled to electrical and mechanical resonators. Based on the linear-drift HP memristor model, the nonlinear electromechanical dynamics are investigated through Lyapunov exponents, bifurcation diagrams, Poincaré sections, recurrence plots, phase portraits, and Fourier spectra. The numerical results demonstrate that the intrinsic memristor parameters, namely the low-resistance state \(R_{on}\), the high-resistance state \(R_{off}\), the oxide thickness D, and the ionic mobility \(\mu _{v}\), directly control the amplitude, frequency content, and dynamical regime of the electromechanical oscillations, inducing transitions between quasi-periodic and chaotic behaviors. Temperature-dependent variations of these memristive parameters are shown to modulate both the oscillation amplitudes and the distribution of quasi-periodic and chaotic regimes, highlighting the thermo-sensitive character of the proposed architecture. A qualitative comparison with Josephson-junction-based MEMS is provided, emphasizing that the HP memristor exhibits similar nonlinear dynamical features while remaining fully operational at room temperature. These results suggest that memristive thermo-sensitive MEMS constitute a promising platform for adaptive nonlinear oscillators, thermo-sensitive sensing devices, and chaos-assisted electromechanical applications.

忆阻MEMS中准周期和混沌动力学的表征:参数诱导跃迁和热敏调制
这项工作提出了一个微机电系统(MEMS)的数学建模和数值表征,该系统集成了一个HP忆阻器,耦合到电气和机械谐振器。基于线性漂移的高压忆阻器模型,通过李雅普诺夫指数、分岔图、庞加莱剖面、递推图、相位图和傅立叶谱研究了其非线性机电动力学。数值结果表明,低阻态\(R_{on}\)、高阻态\(R_{off}\)、氧化物厚度D和离子迁移率\(\mu _{v}\)等本征忆阻器参数直接控制了机电振荡的幅值、频率含量和动力学形式,诱导了准周期和混沌行为之间的过渡。这些忆阻参数的温度相关变化被证明可以调制振荡幅度和准周期和混沌状态的分布,突出了所提出的结构的热敏特性。与基于josephson结的MEMS进行了定性比较,强调HP忆阻器在室温下保持完全工作的同时具有相似的非线性动态特性。这些结果表明,忆阻式热敏MEMS是自适应非线性振荡器、热敏传感器件和混沌辅助机电应用的一个有前途的平台。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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