Optical–Electrical–Thermal Effects on Efficiency Droop in Light-Emitting Diodes

IF 2.8 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jyh-Chen Chen, Huy-Thinh Vo, Tuan Ngoc Anh Vo, Minh-Tuan Ho
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引用次数: 0

Abstract

GaN-based light-emitting diodes (LEDs) experience efficiency droop, limiting high-power performance. This study investigates vertical thin-film chips (TFC) and lateral nervure-like chips (NLC) from chip to package levels via experiments and numerical simulations. To overcome the parameter distortion inherent to conventional single-pass simulations, this work introduces a closed-loop, absorption-aware iterative framework. By dynamically feeding volumetric optical losses back into the electrical rate equations, the proposed model extracts pure recombination parameters that are physically decoupled from macroscopic packaging degradation. Results indicate that current crowding intensifies with input power and junction temperature, causing non-uniform carrier distribution and enhanced non-radiative recombination. Fitted coefficients reveal higher high-injection losses in NLC (larger C and α0) than TFC, correlating with earlier, more severe droop. Optical analysis shows that light extraction efficiency (LEE) decreases as input power rises; at 2.1 W, the LEE drop is 24.47% for NLC and 17.94% for TFC compared to 0.1 W operation. Critically, temperature-dependent absorption in the active region is essential to replicate experimental trends. These findings offer practical strategies for high-power LED packaging and current spreading designs to mitigate efficiency droop.

光电热效应对发光二极管效率下降的影响
氮化镓基发光二极管(led)的效率下降,限制了其高功率性能。本文通过实验和数值模拟对垂直薄膜芯片(TFC)和侧向神经样芯片(NLC)进行了从芯片到封装的研究。为了克服传统单次模拟固有的参数失真,本工作引入了一个闭环,吸收感知迭代框架。通过动态地将体积光学损耗反馈到电速率方程中,该模型提取了与宏观封装降解物理解耦的纯复合参数。结果表明,电流拥挤随着输入功率和结温的增加而加剧,导致载流子分布不均匀,非辐射复合增强。拟合系数显示,NLC的高注入损失(较大的C和α0)高于TFC,与更早、更严重的下垂相关。光学分析表明,光提取效率(LEE)随输入功率的增大而降低;在2.1 W时,与0.1 W相比,NLC的LEE下降了24.47%,TFC的LEE下降了17.94%。关键的是,活性区域的温度依赖吸收对于复制实验趋势至关重要。这些发现为大功率LED封装和电流扩散设计提供了实用策略,以减轻效率下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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