Synthesis, Structure, Morphology, and Photoluminescence in GdNb2VO9:Sm3+ Phosphor for Optical Applications

IF 2.8 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jyoti Mayekar, Shruti Dhale, Shubham Warudkar, Nilesh Ashtankar, Shilpa Kulkarni, Nilesh Ugemuge
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Abstract

A series of an orange-red-emitting phosphor, GdNb2VO9:Sm3+, was synthesized using the solid-state reaction route. For the structural analysis, the synthesized samples were analysed using x-ray diffraction (XRD). From the analysis, it was found that the sample has a perovskite-like structure. To study the morphology of the synthesized samples and for elemental mapping, scanning electron microscopy (SEM) coupled with energy-dispersive x-ray spectroscopy (EDS) was used. SEM confirmed that the particles differed in size and shape. Using EDS, it was confirmed that Gd, Nb, V, and O were present in the desired ratio in the sample. The photoluminescence properties and decay kinetics were investigated to evaluate its potential for solid-state lighting applications. The excitation spectrum was monitored at 605 nm and is dominated by a broad and intense host charge transfer band (CTB) centred at 312 nm. This originates from the vanadate (VO4)3− and niobate (NbO4)3− groups. Upon excitation at 312 nm, the phosphor exhibits 4f → 4f transitions which are characteristic transitions of Sm3+, with the most prominent emission peak located at 605 nm (4G5/2 → 6H7/2). The dominance of the host-related band over the direct Sm3+ transitions indicates an efficient energy transfer process from the GdNb2VO9 host lattice of the activator ions. The luminescence decay curve of the 4G5/2 level follows mono-exponential behaviour with a calculated lifetime of 0.664 ms, suggesting a uniform distribution of Sm3+ in the host matrix. Also, the calculated CIE 1931 chromaticity coordinates confirm high colour purity in the orange-red region. Concentration quenching was observed for the 7 mol.% Sm3+-doped sample, which is because of non-radiative energy migration between Sm3+ ions, cross relaxation processes, and multipolar interaction, likely dipole–dipole type. Furthermore, the high colour purity under 407 nm excitation indicates that the emission is strongly dominated by the characteristic orange-red transitions of Sm3⁺ ions, demonstrating the effectiveness of Sm3⁺ incorporation in tuning the emission colour of the host lattice. In this study, time decay characteristics were studied in detail. The estimated value of quantum efficiency was found to be of the order of 74.8% to 78.8%. These results demonstrate that GdNb2VO9:Sm3+ is a suitable candidate as a red-emitting component for near-UV-excited white light-emitting diodes (w-LEDs).

Graphical Abstract

光学用GdNb2VO9:Sm3+荧光粉的合成、结构、形态及光致发光
采用固相反应的方法合成了一系列橙红色发光荧光粉GdNb2VO9:Sm3+。在结构分析方面,采用x射线衍射(XRD)对合成样品进行了分析。通过分析,发现样品具有类似钙钛矿的结构。利用扫描电子显微镜(SEM)和能量色散x射线能谱(EDS)对合成样品的形貌进行了研究,并进行了元素定位。扫描电镜证实,颗粒大小和形状不同。通过能谱分析,证实了样品中Gd、Nb、V、O以所需的比例存在。研究了其光致发光特性和衰变动力学,以评估其在固态照明中的应用潜力。在605 nm处监测激发光谱,以312 nm为中心的广泛而强烈的宿主电荷转移带(CTB)为主。这源于钒酸盐(VO4)3−和铌酸盐(NbO4)3−基团。在312 nm激发时,荧光粉呈现4f→4f跃迁,这是Sm3+的特征跃迁,其中605 nm处的发射峰最为突出(4G5/2→6H7/2)。宿主相关带在Sm3+直接跃迁中的优势表明激活离子的GdNb2VO9宿主晶格的有效能量转移过程。4G5/2能级的发光衰减曲线服从单指数行为,计算寿命为0.664 ms,表明Sm3+在宿主矩阵中分布均匀。同时,计算出的CIE 1931色度坐标也证实了橘红色区域的高纯度。7mol .% Sm3+掺杂样品的浓度猝灭是由于Sm3+离子之间的非辐射能量迁移,交叉弛豫过程和多极相互作用,可能是偶极子-偶极子类型。此外,在407 nm激发下的高颜色纯度表明,Sm3⁺的发射强烈地受到Sm3⁺特有的橙红色跃迁的支配,这表明Sm3⁺在调节主晶格发射颜色方面是有效的。在本研究中,详细研究了时间衰减特性。量子效率的估计值在74.8% ~ 78.8%之间。这些结果表明,GdNb2VO9:Sm3+是近紫外激发白光发光二极管(w- led)的合适红发元件。图形抽象
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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