{"title":"Synthesis, Structure, Morphology, and Photoluminescence in GdNb2VO9:Sm3+ Phosphor for Optical Applications","authors":"Jyoti Mayekar, Shruti Dhale, Shubham Warudkar, Nilesh Ashtankar, Shilpa Kulkarni, Nilesh Ugemuge","doi":"10.1007/s11664-026-13070-y","DOIUrl":null,"url":null,"abstract":"<div><p>A series of an orange-red-emitting phosphor, GdNb<sub>2</sub>VO<sub>9</sub>:Sm<sup>3+</sup>, was synthesized using the solid-state reaction route. For the structural analysis, the synthesized samples were analysed using x-ray diffraction (XRD). From the analysis, it was found that the sample has a perovskite-like structure. To study the morphology of the synthesized samples and for elemental mapping, scanning electron microscopy (SEM) coupled with energy-dispersive x-ray spectroscopy (EDS) was used. SEM confirmed that the particles differed in size and shape. Using EDS, it was confirmed that Gd, Nb, V, and O were present in the desired ratio in the sample. The photoluminescence properties and decay kinetics were investigated to evaluate its potential for solid-state lighting applications. The excitation spectrum was monitored at 605 nm and is dominated by a broad and intense host charge transfer band (CTB) centred at 312 nm. This originates from the vanadate (VO<sub>4</sub>)<sup>3−</sup> and niobate (NbO<sub>4</sub>)<sup>3−</sup> groups. Upon excitation at 312 nm, the phosphor exhibits 4<i>f</i> → 4<i>f</i> transitions which are characteristic transitions of Sm<sup>3+</sup>, with the most prominent emission peak located at 605 nm (<sup>4</sup>G<sub>5/2</sub> → <sup>6</sup>H<sub>7/2</sub>). The dominance of the host-related band over the direct Sm<sup>3+</sup> transitions indicates an efficient energy transfer process from the GdNb<sub>2</sub>VO<sub>9</sub> host lattice of the activator ions. The luminescence decay curve of the <sup>4</sup>G<sub>5/2</sub> level follows mono-exponential behaviour with a calculated lifetime of 0.664 ms, suggesting a uniform distribution of Sm<sup>3+</sup> in the host matrix. Also, the calculated CIE 1931 chromaticity coordinates confirm high colour purity in the orange-red region. Concentration quenching was observed for the 7 mol.% Sm<sup>3+</sup>-doped sample, which is because of non-radiative energy migration between Sm<sup>3+</sup> ions, cross relaxation processes, and multipolar interaction, likely dipole–dipole type. Furthermore, the high colour purity under 407 nm excitation indicates that the emission is strongly dominated by the characteristic orange-red transitions of Sm<sup>3</sup>⁺ ions, demonstrating the effectiveness of Sm<sup>3</sup>⁺ incorporation in tuning the emission colour of the host lattice. In this study, time decay characteristics were studied in detail. The estimated value of quantum efficiency was found to be of the order of 74.8% to 78.8%. These results demonstrate that GdNb<sub>2</sub>VO<sub>9</sub>:Sm<sup>3+</sup> is a suitable candidate as a red-emitting component for near-UV-excited white light-emitting diodes (w-LEDs).</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8994 - 9007"},"PeriodicalIF":2.8000,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-026-13070-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A series of an orange-red-emitting phosphor, GdNb2VO9:Sm3+, was synthesized using the solid-state reaction route. For the structural analysis, the synthesized samples were analysed using x-ray diffraction (XRD). From the analysis, it was found that the sample has a perovskite-like structure. To study the morphology of the synthesized samples and for elemental mapping, scanning electron microscopy (SEM) coupled with energy-dispersive x-ray spectroscopy (EDS) was used. SEM confirmed that the particles differed in size and shape. Using EDS, it was confirmed that Gd, Nb, V, and O were present in the desired ratio in the sample. The photoluminescence properties and decay kinetics were investigated to evaluate its potential for solid-state lighting applications. The excitation spectrum was monitored at 605 nm and is dominated by a broad and intense host charge transfer band (CTB) centred at 312 nm. This originates from the vanadate (VO4)3− and niobate (NbO4)3− groups. Upon excitation at 312 nm, the phosphor exhibits 4f → 4f transitions which are characteristic transitions of Sm3+, with the most prominent emission peak located at 605 nm (4G5/2 → 6H7/2). The dominance of the host-related band over the direct Sm3+ transitions indicates an efficient energy transfer process from the GdNb2VO9 host lattice of the activator ions. The luminescence decay curve of the 4G5/2 level follows mono-exponential behaviour with a calculated lifetime of 0.664 ms, suggesting a uniform distribution of Sm3+ in the host matrix. Also, the calculated CIE 1931 chromaticity coordinates confirm high colour purity in the orange-red region. Concentration quenching was observed for the 7 mol.% Sm3+-doped sample, which is because of non-radiative energy migration between Sm3+ ions, cross relaxation processes, and multipolar interaction, likely dipole–dipole type. Furthermore, the high colour purity under 407 nm excitation indicates that the emission is strongly dominated by the characteristic orange-red transitions of Sm3⁺ ions, demonstrating the effectiveness of Sm3⁺ incorporation in tuning the emission colour of the host lattice. In this study, time decay characteristics were studied in detail. The estimated value of quantum efficiency was found to be of the order of 74.8% to 78.8%. These results demonstrate that GdNb2VO9:Sm3+ is a suitable candidate as a red-emitting component for near-UV-excited white light-emitting diodes (w-LEDs).
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.