Chenghao Han;Hongqi Tao;Kang Zhong;Mingming Ma;Zehao Du;Yuan Zhuang;Xuming Yu;Wei Zhang;Weibo Wang
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引用次数: 0
Abstract
This paper proposes a novel nonlinear current anti-phase technique to enhance the linearity of gallium nitride (GaN) power amplifiers, specifically designed for the 24 GHz-28 GHz within the fifth-generation frequency range 2 n258 band. To solve the limited accuracy of conventional gm3 analysis in predicting the third-order intermodulation distortion (IMD3) performance under large dynamic range conditions, a large signal parameter $G_{\mathrm{m}3}$ is developed and analyzed that creates the anti-phase IMD3 current which can be flexibly controlled in both drive stage and power stage with deliberate biasing, enabling effective cancellation of IMD3 at across a large dynamic range. In addition, a shunt of resistive voltage divider was implemented to avoid multiple gate bias supplies. To demonstrate the proposed approach, a class-AB millimeter-wave power amplifier is implemented based on a 0.15 μm GaN-on-silicon carbide high electron mobility transistor technology. Under continuous-wave excitation at 20 V drain bias, the fabricated power amplifier (PA) demonstrates 40.5 dBm-40.9 dBm saturated output power over the 24 GHz-28 GHz frequency range, while the measured power-added efficiency (PAE) remains between 42.5% and 45.5%. Over a large output power back-off (OBO) range of 6 dB-25 dB, the PA achieves excellent linearity, with IMD3 better than −39 dBc. Additionally, at 4 dB OBO, the PA also achieves an IMD3 of −31 dBc and a PAE exceeding 24.5%. Owing to its excellent linearity, the proposed monolithic microwave integrated circuit, when tested with a 64-quadrature amplitude modulation signal featuring a 400 MHz modulation bandwidth and a 14 dB peak-to-average power ratio, provides 26 dBm of average output power. Under these operating conditions, it attains an error vector magnitude of 2.56% and an adjacent channel leakage ratio of −35.5 dBc without applying digital predistortion. The measured and simulated results verify the effectiveness of the high-linearity PA design over a large dynamic range.
期刊介绍:
CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.