Nonlinear Current Anti-Phase Technique in a Linearity-Enhanced 24 GHz-28 GHz GaN MMIC Power Amplifier for 5G mm-Wave Applications

IF 4.5 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Chinese Journal of Electronics Pub Date : 2026-07-01 Epub Date: 2026-09-09 DOI:10.23919/cje.2025.00.326
Chenghao Han;Hongqi Tao;Kang Zhong;Mingming Ma;Zehao Du;Yuan Zhuang;Xuming Yu;Wei Zhang;Weibo Wang
{"title":"Nonlinear Current Anti-Phase Technique in a Linearity-Enhanced 24 GHz-28 GHz GaN MMIC Power Amplifier for 5G mm-Wave Applications","authors":"Chenghao Han;Hongqi Tao;Kang Zhong;Mingming Ma;Zehao Du;Yuan Zhuang;Xuming Yu;Wei Zhang;Weibo Wang","doi":"10.23919/cje.2025.00.326","DOIUrl":null,"url":null,"abstract":"This paper proposes a novel nonlinear current anti-phase technique to enhance the linearity of gallium nitride (GaN) power amplifiers, specifically designed for the 24 GHz-28 GHz within the fifth-generation frequency range 2 n258 band. To solve the limited accuracy of conventional gm3 analysis in predicting the third-order intermodulation distortion (IMD3) performance under large dynamic range conditions, a large signal parameter <tex>$G_{\\mathrm{m}3}$</tex> is developed and analyzed that creates the anti-phase IMD3 current which can be flexibly controlled in both drive stage and power stage with deliberate biasing, enabling effective cancellation of IMD3 at across a large dynamic range. In addition, a shunt of resistive voltage divider was implemented to avoid multiple gate bias supplies. To demonstrate the proposed approach, a class-AB millimeter-wave power amplifier is implemented based on a 0.15 μm GaN-on-silicon carbide high electron mobility transistor technology. Under continuous-wave excitation at 20 V drain bias, the fabricated power amplifier (PA) demonstrates 40.5 dBm-40.9 dBm saturated output power over the 24 GHz-28 GHz frequency range, while the measured power-added efficiency (PAE) remains between 42.5% and 45.5%. Over a large output power back-off (OBO) range of 6 dB-25 dB, the PA achieves excellent linearity, with IMD3 better than −39 dBc. Additionally, at 4 dB OBO, the PA also achieves an IMD3 of −31 dBc and a PAE exceeding 24.5%. Owing to its excellent linearity, the proposed monolithic microwave integrated circuit, when tested with a 64-quadrature amplitude modulation signal featuring a 400 MHz modulation bandwidth and a 14 dB peak-to-average power ratio, provides 26 dBm of average output power. Under these operating conditions, it attains an error vector magnitude of 2.56% and an adjacent channel leakage ratio of −35.5 dBc without applying digital predistortion. The measured and simulated results verify the effectiveness of the high-linearity PA design over a large dynamic range.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":"35 4","pages":"1669-1677"},"PeriodicalIF":4.5000,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11685209","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Electronics","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/11685209/","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/9/9 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This paper proposes a novel nonlinear current anti-phase technique to enhance the linearity of gallium nitride (GaN) power amplifiers, specifically designed for the 24 GHz-28 GHz within the fifth-generation frequency range 2 n258 band. To solve the limited accuracy of conventional gm3 analysis in predicting the third-order intermodulation distortion (IMD3) performance under large dynamic range conditions, a large signal parameter $G_{\mathrm{m}3}$ is developed and analyzed that creates the anti-phase IMD3 current which can be flexibly controlled in both drive stage and power stage with deliberate biasing, enabling effective cancellation of IMD3 at across a large dynamic range. In addition, a shunt of resistive voltage divider was implemented to avoid multiple gate bias supplies. To demonstrate the proposed approach, a class-AB millimeter-wave power amplifier is implemented based on a 0.15 μm GaN-on-silicon carbide high electron mobility transistor technology. Under continuous-wave excitation at 20 V drain bias, the fabricated power amplifier (PA) demonstrates 40.5 dBm-40.9 dBm saturated output power over the 24 GHz-28 GHz frequency range, while the measured power-added efficiency (PAE) remains between 42.5% and 45.5%. Over a large output power back-off (OBO) range of 6 dB-25 dB, the PA achieves excellent linearity, with IMD3 better than −39 dBc. Additionally, at 4 dB OBO, the PA also achieves an IMD3 of −31 dBc and a PAE exceeding 24.5%. Owing to its excellent linearity, the proposed monolithic microwave integrated circuit, when tested with a 64-quadrature amplitude modulation signal featuring a 400 MHz modulation bandwidth and a 14 dB peak-to-average power ratio, provides 26 dBm of average output power. Under these operating conditions, it attains an error vector magnitude of 2.56% and an adjacent channel leakage ratio of −35.5 dBc without applying digital predistortion. The measured and simulated results verify the effectiveness of the high-linearity PA design over a large dynamic range.
用于5G毫米波应用的线性增强24ghz - 28ghz GaN MMIC功率放大器的非线性电流反相技术
本文提出了一种新的非线性电流反相技术,以提高氮化镓(GaN)功率放大器的线性度,该放大器专为第五代频率范围2n258频段内的24ghz - 28ghz设计。为了解决传统的gm3分析在大动态范围条件下预测三阶互调失真(IMD3)性能时精度有限的问题,开发并分析了一个大信号参数$G_{\mathrm{m}3}$,该参数可产生反相IMD3电流,该电流可在驱动级和功率级灵活控制,并有意偏置,从而在大动态范围内有效抵消IMD3。另外,采用电阻分压器的分流方式,避免了多个栅极偏置电源。为了验证所提出的方法,基于0.15 μm gan -on-碳化硅高电子迁移率晶体管技术实现了ab类毫米波功率放大器。在20 V漏极偏置的连续波激励下,该功率放大器在24 GHz ~ 28 GHz频率范围内的饱和输出功率为40.5 dBm ~ 40.9 dBm,而测量的功率附加效率(PAE)保持在42.5% ~ 45.5%之间。在6 dB-25 dB的大输出功率回退(OBO)范围内,PA实现了出色的线性度,IMD3优于- 39 dBc。此外,在4 dB OBO时,PA也实现了−31 dBc的IMD3和超过24.5%的PAE。由于该单片微波集成电路具有良好的线性度,在400 MHz调制带宽和14 dB峰均功率比的64正交调幅信号下测试,其平均输出功率为26 dBm。在这些工作条件下,在不施加数字预失真的情况下,它的误差矢量幅度为2.56%,相邻通道泄漏比为- 35.5 dBc。测量和仿真结果验证了高线性放大器设计在大动态范围内的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Chinese Journal of Electronics
Chinese Journal of Electronics 工程技术-工程:电子与电气
CiteScore
3.70
自引率
16.70%
发文量
342
审稿时长
12.0 months
期刊介绍: CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书