An Accurate 3.3 kV SiC MOSFET Empirical Model Considering Temperature Effects

Abstract

Silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) show significant advantages in diverse application scenarios due to their superior performance. However, the existing simulation program with integrated circuit emphasis models developed for low-voltage devices cannot be effectively applied to high-voltage (> 3.3 kV) SiC MOSFETs in practical applications, which may cause unreliable circuit simulations. This paper presents an empirical model for 3.3 kV SiC MOSFETs that considers temperature effects. The model focuses on static and dynamic characteristics using non-segmented equations, ensuring smooth and accurate predictions of the device's output and transfer characteristics. Besides, temperature-dependent parameters are incorporated into the equations to correctly reflect the correlation between characteristics and temperature.For the capacitance model, the new compensation equation is added to the commonly used capacitance fitting equations, and the accuracy of this enhanced capacitance model is verified by fitting the capacitance experimental results of the device using the new capacitance equations. The body diode modeling adopts a combined approach of parameter extraction using the model editor and equation fitting. The adoption of non-segmented effectively avoids convergence problems inherent in traditional segmented models, while the integration of compensation equations brings simulation results closer to real operating conditions. Moreover, the incorporation of temperature-dependent parameters expands the model's applicability, enabling it to better support related design processes.