Steven Matthew Cheng;Andrés Fontana;Dimitra Psychogiou
{"title":"Co-Designed Quasi-Reflectionless Low-Noise Amplifier With Bandpass Filter and RF Switching Functionalities","authors":"Steven Matthew Cheng;Andrés Fontana;Dimitra Psychogiou","doi":"10.1109/LMWT.2026.3676313","DOIUrl":null,"url":null,"abstract":"In this letter, a reflectionless low-noise amplifier (LNA) filter (RLNAF) is presented, incorporating four distinct functions: 1) filtering; 2) reflection cancellation; 3) low-noise amplification; and 4) RF switching within a single component. It is comprised of a transmissive path and two absorptive paths. Specifically, a complex-termination methodology is applied to the transmissive path incorporating a bandpass filter (BPF) and LNA functionalities, removing the need for additional interstage matching networks (MNs). The absorptive paths are composed of a bandstop filter terminated with a loading resistor in one port to selectively dissipate the out-of-band reflected RF signals. Moreover, switch-off functionality is demonstrated by reconfiguring the bias of the transistor. For proof-of-concept validation purposes, two RLNAF prototypes are designed, manufactured, and measured at C-band. The RF characteristics are given as follows: RLNAF I: <inline-formula> <tex-math>$f_{cen} = 4.65$ </tex-math></inline-formula> GHz, gain = 15.8 dB, noise figure (NF) = 2.07 dB, and quasi-reflectionless characteristics better than 10 dB from DC to 4.27 and 4.34 GHz to 6.42 GHz and at least 9.8 dB from 4.27 to 4.34 GHz; RLNAF II: <inline-formula> <tex-math>$f_{cen} = 3.7$ </tex-math></inline-formula> GHz, gain = 15.3 dB, NF = 1.09 dB, and quasi-reflectionless characteristics better than 10 dB from DC to 4.75 and 5.75 GHz to 7.03 GHz and at least 6 dB from 4.75 to 5.75 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1490-1493"},"PeriodicalIF":3.4000,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11468366","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11468366/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/4/1 0:00:00","PubModel":"Epub","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this letter, a reflectionless low-noise amplifier (LNA) filter (RLNAF) is presented, incorporating four distinct functions: 1) filtering; 2) reflection cancellation; 3) low-noise amplification; and 4) RF switching within a single component. It is comprised of a transmissive path and two absorptive paths. Specifically, a complex-termination methodology is applied to the transmissive path incorporating a bandpass filter (BPF) and LNA functionalities, removing the need for additional interstage matching networks (MNs). The absorptive paths are composed of a bandstop filter terminated with a loading resistor in one port to selectively dissipate the out-of-band reflected RF signals. Moreover, switch-off functionality is demonstrated by reconfiguring the bias of the transistor. For proof-of-concept validation purposes, two RLNAF prototypes are designed, manufactured, and measured at C-band. The RF characteristics are given as follows: RLNAF I: $f_{cen} = 4.65$ GHz, gain = 15.8 dB, noise figure (NF) = 2.07 dB, and quasi-reflectionless characteristics better than 10 dB from DC to 4.27 and 4.34 GHz to 6.42 GHz and at least 9.8 dB from 4.27 to 4.34 GHz; RLNAF II: $f_{cen} = 3.7$ GHz, gain = 15.3 dB, NF = 1.09 dB, and quasi-reflectionless characteristics better than 10 dB from DC to 4.75 and 5.75 GHz to 7.03 GHz and at least 6 dB from 4.75 to 5.75 GHz.