A 6--18-GHz, 10-W GaN Balanced Power Amplifier Employing Harmonic Suppression and Harmonic Phase-Control Techniques

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-03-31 DOI:10.1109/LMWT.2026.3676418

Yusheng Sun;Liang Zhao;Youming Zhang;Xusheng Tang;Fengyi Huang

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引用次数: 0

Abstract

This letter presents a 6–18-GHz, 10-W balanced power amplifier (BPA) monolithic microwave integrated circuit (MMIC) fabricated in a 0.25-

$\mu $

m gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) process. To meet the stringent harmonic suppression requirements of ultrawideband radar, electronic-warfare systems, and satellite-communication applications, a modified elliptic-filter output matching network is proposed and combined with a harmonic phase-control technique to boost power-added efficiency (PAE) and pout uniformly across the full band. Under continuous-wave measurement conditions, the MMIC delivers a power gain of 19.7–21.2 dB, a saturated output power of 40.2–41.1 dBm, and a PAE of 24%–36% over the entire 6–18-GHz band. Second-harmonic suppression (H2S) is −45.6 dB at 10 GHz, and spurious-emission suppression exceeds 70 dB. The DC supply voltage is 24 V, and the core chip occupies 15.2 mm², demonstrating a highly compact balanced architecture.

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一种采用谐波抑制和谐波相位控制技术的6—18ghz， 10w GaN平衡功率放大器

本文介绍了一种6 - 18ghz， 10w平衡功率放大器（BPA）单片微波集成电路（MMIC），采用0.25- $\mu $ m的氮化镓和碳化硅（GaN-on-SiC）高电子迁移率晶体管（HEMT）工艺制造。为了满足超宽带雷达、电子战系统和卫星通信应用对谐波抑制的严格要求，提出了一种改进的椭圆滤波器输出匹配网络，并将其与谐波相位控制技术相结合，以提高功率附加效率（PAE），并在全频带内均匀输出。在连续波测量条件下，MMIC在整个6 - 18 ghz频段的功率增益为19.7-21.2 dB，饱和输出功率为40.2-41.1 dBm， PAE为24%-36%。10ghz时二次谐波抑制（H2S）为- 45.6 dB，杂散发射抑制超过70 dB。直流电源电压为24 V，核心芯片占地15.2 mm2，具有高度紧凑的平衡架构。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

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