Evidence of micrometer-scale ion damage in (010), (110), and (011) β-Ga2O3 epitaxial layers

IF 3.8 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2026-08-31 DOI:10.1063/5.0340749

Carl Peterson,Chinmoy Nath Saha,Yizheng Liu,James S. Speck,Sriram Krishnamoorthy

{"title":"Evidence of micrometer-scale ion damage in (010), (110), and (011) β-Ga2O3 epitaxial layers","authors":"Carl Peterson,Chinmoy Nath Saha,Yizheng Liu,James S. Speck,Sriram Krishnamoorthy","doi":"10.1063/5.0340749","DOIUrl":null,"url":null,"abstract":"We report the experimental observation of charge depletion up to 11.5 μm deep in (010), (110), and (011) β-Ga2O3 epitaxial layers due to ion damage from sputtering and inductively coupled plasma (ICP) etching processes, whereas charge depletion in (001) β-Ga2O3 epitaxial layers was minimal. The orientation-dependent reduction in C–V-measured charge density was first observed in NiOx reactively sputtered heterojunction p–n diodes (HJDs). When compared to reference low-damage Schottky barrier diodes (SBDs), the sputtered HJDs showed a 9.4× increase in the specific on resistance (Ron,sp) and an 85% reduction in net donor concentration (ND − NA) at zero bias for sputter-damaged HJDs on (010) epitaxial layers, whereas HJDs on (001) remained unchanged. Similarly, sputtered SiO2 caused a reduction in ND − NA, extending 11.5 μm into the (010) material. Next, SBDs were fabricated on β-Ga2O3 surfaces previously etched via a BCl3 based ICP process and compared to SBDs on un-etched surfaces. The (010) SBDs on etched surfaces exhibited a 7.7× increase in Ron,sp and a 91% reduction in ND − NA at zero bias, whereas the (001) etched diodes exhibited little change. Additionally, (110) and (011) diodes fabricated on ICP damaged surfaces also showed an ∼82% reduction in ND − NA at zero bias, indicating that the (110) and (011) orientations are also susceptible to ion damage. Damage in the (010), (110), and (011) diodes is potentially caused by energetic ions that travel into the open channels present along the [010] direction and create compensating point defects, which could potentially diffuse further.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"56 1","pages":""},"PeriodicalIF":3.8000,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0340749","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

We report the experimental observation of charge depletion up to 11.5 μm deep in (010), (110), and (011) β-Ga2O3 epitaxial layers due to ion damage from sputtering and inductively coupled plasma (ICP) etching processes, whereas charge depletion in (001) β-Ga2O3 epitaxial layers was minimal. The orientation-dependent reduction in C–V-measured charge density was first observed in NiOx reactively sputtered heterojunction p–n diodes (HJDs). When compared to reference low-damage Schottky barrier diodes (SBDs), the sputtered HJDs showed a 9.4× increase in the specific on resistance (Ron,sp) and an 85% reduction in net donor concentration (ND − NA) at zero bias for sputter-damaged HJDs on (010) epitaxial layers, whereas HJDs on (001) remained unchanged. Similarly, sputtered SiO2 caused a reduction in ND − NA, extending 11.5 μm into the (010) material. Next, SBDs were fabricated on β-Ga2O3 surfaces previously etched via a BCl3 based ICP process and compared to SBDs on un-etched surfaces. The (010) SBDs on etched surfaces exhibited a 7.7× increase in Ron,sp and a 91% reduction in ND − NA at zero bias, whereas the (001) etched diodes exhibited little change. Additionally, (110) and (011) diodes fabricated on ICP damaged surfaces also showed an ∼82% reduction in ND − NA at zero bias, indicating that the (110) and (011) orientations are also susceptible to ion damage. Damage in the (010), (110), and (011) diodes is potentially caused by energetic ions that travel into the open channels present along the [010] direction and create compensating point defects, which could potentially diffuse further.

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（010）、（110）和(011)β-Ga2O3外延层中微米级离子损伤的证据

我们报道了在（010）、（110）和(011)β-Ga2O3外延层中，由于溅射和电感耦合等离子体（ICP）蚀刻过程中的离子损伤，电荷损耗高达11.5 μm，而(001)β-Ga2O3外延层中的电荷损耗最小。在NiOx反应溅射异质结p-n二极管（HJDs）中首次观察到c - v测量电荷密度的取向依赖性降低。与参考低损伤肖特基势垒二极管（sdd）相比，（010）外延层上溅射损伤的HJDs在零偏置下的比电阻值（Ron,sp）增加了9.4倍，净供体浓度（ND - NA）减少了85%，而（001）外延层上的HJDs保持不变。同样，溅射SiO2导致ND−NA的减少，延伸到（010）材料中11.5 μm。接下来，在先前通过基于BCl3的ICP工艺蚀刻的β-Ga2O3表面上制备sdd，并与未蚀刻表面上的sdd进行比较。蚀刻表面上的（010）sdd在零偏压下的Ron，sp增加了7.7倍，ND - NA减少了91%，而（001）蚀刻的二极管几乎没有变化。此外，在ICP损伤表面上制作的（110）和（011）二极管在零偏置下也显示出ND - NA减少约82%，这表明（110）和（011）取向也容易受到离子损伤。（010）、（110）和（011）二极管中的损坏可能是由沿[010]方向进入存在的开放通道并产生补偿点缺陷的高能离子引起的，该补偿点缺陷可能进一步扩散。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.