{"title":"Interfacial modulation promoted CC coupling in selective methane oxidation to ethanol","authors":"Ke‐Xin Li, Weimin Huang, Jingwen Huang, Zhenyuan He, Shanshan Chen, Shifeng Wang, Yong Li, Yuanhao Wang, Zhun Hu","doi":"10.1002/aic.70637","DOIUrl":null,"url":null,"abstract":"Selective methane oxidation to ethanol remained a formidable challenge. Herein, MOF‐derived In <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> was synthesized via MIL‐68(In) pyrolysis. The optimized In <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> ‐500 achieved an ethanol yield of 10.8 mmol·g <jats:sup>−1</jats:sup> ·h <jats:sup>−1</jats:sup> under full‐spectrum illumination. These performances were attributed to carboxylate type CO related interfacial modulation, which enriched surface electron density and promoted CC coupling. During derivation, precursor derived carbon species were retained as carboxylate type CO related structures and interacted with the InO framework, inducing surface charge redistribution. Compared with In <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> ‐400, which retained residual MOF structures, and highly crystalline In <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> ‐600, which exhibited severe charge recombination, In <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> ‐500 exhibited a higher surface electron density and enhanced ·OH and ·CH <jats:sub>3</jats:sub> generation, thereby promoting the stepwise oxidation of *CH <jats:sub>3</jats:sub> to *CH <jats:sub>3</jats:sub> O and *CH <jats:sub>2</jats:sub> O. The enriched *CH <jats:sub>2</jats:sub> O and *CH <jats:sub>3</jats:sub> intermediates further facilitated C–C coupling to form ethanol. These findings highlighted the role of electron‐rich surfaces in steering methane conversion toward ethanol.","PeriodicalId":120,"journal":{"name":"AIChE Journal","volume":"9 1","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"AIChE Journal","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1002/aic.70637","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Selective methane oxidation to ethanol remained a formidable challenge. Herein, MOF‐derived In 2 O 3 was synthesized via MIL‐68(In) pyrolysis. The optimized In 2 O 3 ‐500 achieved an ethanol yield of 10.8 mmol·g −1 ·h −1 under full‐spectrum illumination. These performances were attributed to carboxylate type CO related interfacial modulation, which enriched surface electron density and promoted CC coupling. During derivation, precursor derived carbon species were retained as carboxylate type CO related structures and interacted with the InO framework, inducing surface charge redistribution. Compared with In 2 O 3 ‐400, which retained residual MOF structures, and highly crystalline In 2 O 3 ‐600, which exhibited severe charge recombination, In 2 O 3 ‐500 exhibited a higher surface electron density and enhanced ·OH and ·CH 3 generation, thereby promoting the stepwise oxidation of *CH 3 to *CH 3 O and *CH 2 O. The enriched *CH 2 O and *CH 3 intermediates further facilitated C–C coupling to form ethanol. These findings highlighted the role of electron‐rich surfaces in steering methane conversion toward ethanol.
期刊介绍:
The AIChE Journal is the premier research monthly in chemical engineering and related fields. This peer-reviewed and broad-based journal reports on the most important and latest technological advances in core areas of chemical engineering as well as in other relevant engineering disciplines. To keep abreast with the progressive outlook of the profession, the Journal has been expanding the scope of its editorial contents to include such fast developing areas as biotechnology, electrochemical engineering, and environmental engineering.
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