High Quality MoS2 Layered Thin Films Obtained by Ionized Jet Deposition Investigated by X-ray Absorption Spectroscopy at S L2,3 and Mo M2,3 Edges

IF 4.5 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Advanced Materials Interfaces Pub Date : 2026-08-19 Epub Date: 2026-07-20 DOI:10.1002/admi.70606
Giulia Giovanelli, Alessandro Lodi, Angelo Giglia, Nicola Mahne, Rahul Kesarwani, Jana Vejpravova, Steffen Rühl, Giovanni Ligorio, Emil J. W. List-Kratochvil, Lucia Nasi, Melanie Timpel, Marco V. Nardi, Luca Pasquali
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引用次数: 0

Abstract

We present a comparative soft x-ray absorption spectroscopy (XAS) study of the sulfur L2,3 and molybdenum M2,3 absorption edges in MoS2 prepared by different fabrication routes, including bulk crystallization, mechanical exfoliation, chemical vapor deposition (CVD), and ionized jet deposition (IJD). The S L2,3 edges reveal pronounced differences in pre-edge and main-edge fine structure that sensitively reflect the degree of structural order, dimensionality, and electronic hybridization between S 3p and Mo 4d states. Bulk, exfoliated, and CVD-grown samples exhibit well-resolved multiple features characteristic of layered and ordered two-dimensional (2D) MoS2, whereas as-deposited IJD-grown films display broadened, weakly structured spectra consistent with an amorphous phase and poorly defined stoichiometry. Upon moderate annealing at 250°C, IJD-grown films develop clear spectral signatures of layered MoS2, indicating the formation of an ordered crystalline 2H-MoS2 phase. Complementary analysis of the Mo M2,3 edges shows a concomitant narrowing and energy shift of the M3 feature toward values typical of well-ordered 2D MoS2. These results demonstrate that S L2,3 and Mo M2,3 XAS provide a sensitive probe of synthesis-dependent electronic structure in MoS2 and confirm IJD as a viable, low-temperature route to electronically ordered 2D MoS2 phases.

用x射线吸收光谱在sl2,3和Mo M2,3边缘研究电离射流沉积制备高质量MoS2层状薄膜
本文利用软x射线吸收光谱(XAS)对比研究了采用块体结晶、机械剥离、化学气相沉积(CVD)和电离射流沉积(IJD)等不同工艺制备的二硫化钼中硫L2,3和钼M2,3的吸收边。sl2,3边缘显示出前边缘和主边缘精细结构的显著差异,这敏感地反映了s3p态和mo4d态之间的结构有序程度、维数和电子杂化程度。大块、脱落和cvd生长的样品表现出层状有序二维(2D) MoS2的多种特征,而沉积的ijd生长的薄膜显示出宽的、弱结构的光谱,与非晶态相一致,化学测量不明确。在250℃适度退火后,ijd生长的薄膜呈现出清晰的MoS2层状光谱特征,表明形成了有序的2H-MoS2晶相。对Mo M2,3边缘的补充分析显示,M3特征同时变窄,能量向二维有序MoS2的典型值偏移。这些结果表明,sl2,3和Mo M2,3 XAS提供了MoS2中合成相关电子结构的敏感探针,并证实了IJD是一种可行的低温途径,可以获得电子有序的2D MoS2相。
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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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