A Microprocessor-Based Temperature-Compensated Bias-Voltage Source for a Silicon Photomultiplier

IF 0.4 4区 工程技术 Q4 ENGINEERING, MULTIDISCIPLINARY
V. V. Rakhmanov, S. V. Dvoynishnikov, V. G. Meledin, G. V. Bakakin, K. S. Zubanov
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引用次数: 0

Abstract

A microprocessor-based temperature-compensated bias voltage source is presented. It stabilizes the gain of a silicon photomultiplier (SiPM) within the temperature range of 10–60°C. The temperature dependence is compensated via dynamic correction of the bias voltage according to the measured temperature and individual parameters of a particular photomultiplier. Experimental studies were performed on two PM3325-WB-D0 SiPM specimens and confirmed the efficiency of the proposed approach: the gain spread does not exceed ±1.5% for an overvoltage of 1 V or more, and the gain spread is within ±2.5% for lower overvoltage values. The presented microprocessor-based temperature-compensated bias-voltage source can be scaled for multichannel systems and adapted to various types of micropixel silicon photomultipliers.

基于微处理器的硅光电倍增管温度补偿偏置电压源
提出了一种基于微处理器的温度补偿偏置电压源。它在10-60°C的温度范围内稳定硅光电倍增管(SiPM)的增益。根据测量温度和特定光电倍增管的单个参数,通过动态校正偏置电压来补偿温度依赖性。在两个PM3325-WB-D0 SiPM样品上进行了实验研究,证实了所提出方法的效率:过电压为1 V或更高时,增益扩展不超过±1.5%,过电压较低时,增益扩展在±2.5%以内。所提出的基于微处理器的温度补偿偏置电压源可用于多通道系统,并适用于各种类型的微像素硅光电倍增管。
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来源期刊
Instruments and Experimental Techniques
Instruments and Experimental Techniques 工程技术-工程:综合
CiteScore
1.20
自引率
33.30%
发文量
113
审稿时长
4-8 weeks
期刊介绍: Instruments and Experimental Techniques is an international peer reviewed journal that publishes reviews describing advanced methods for physical measurements and techniques and original articles that present techniques for physical measurements, principles of operation, design, methods of application, and analysis of the operation of physical instruments used in all fields of experimental physics and when conducting measurements using physical methods and instruments in astronomy, natural sciences, chemistry, biology, medicine, and ecology.
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