Photon-driven electron excitations in quantum materials

IF 34.8
Xuan Dong, Jiali Huo, Ying Xiong, Yee Sin Ang, Hue Thi Bich Do, Dmitrii Gromyko, Guangxin Liu, Michel Bosman, Kah-Wee Ang, Lay Kee Ang, Cheng-Wei Qiu, Zhaogang Dong, Lin Wu
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Abstract

Photon-driven electron excitation is a foundational mechanism underpinning the interaction between light and matter in quantum materials, including van der Waals materials, Dirac and Weyl semi-metals, topological insulators and other emergent phases. These enable next-generation optoelectronic, energy conversion and quantum information technologies. However, translating this mechanistic understanding into an engineering implementation is hindered by excitation efficiency, environmental stability and scalable fabrication. In this Review, we provide a mechanistic perspective on key photon-driven electron-excitation processes based on energy flow pathways, including electron–hole generation in semiconductors, high-mobility electron transport in semi-metals, photoemission from metals and low-dimensional materials, and light-induced thermoelectric effects. We examine engineering strategies to enhance the efficiency of these processes, including interface control, material selection and compatible integration. By bridging fundamental mechanisms with device-level metrics, this Review offers a unified framework and practical roadmap for advancing scalable, multifunctional optoelectronic devices that integrate sensing, data storage and computation. This Review explores photon-driven electron excitations in quantum materials, connecting semiconductor photogeneration, semi-metal transport, photoemission and thermoelectric conversion to device-level trade-offs. It highlights cross-mechanism benchmarking, presenting a roadmap towards complementary metal oxide semiconductor (CMOS)-compatible optoelectronics for integrated sensing, memory, computation and emerging photonic technologies.
量子材料中的光子驱动电子激发
光子驱动的电子激发是支持量子材料中光与物质相互作用的基本机制,包括范德华材料、狄拉克和Weyl半金属、拓扑绝缘体和其他涌现相。这些技术使下一代光电、能量转换和量子信息技术成为可能。然而,将这种机制理解转化为工程实施受到激励效率、环境稳定性和可扩展制造的阻碍。在这篇综述中,我们提供了基于能量流动途径的关键光子驱动电子激发过程的机制视角,包括半导体中的电子空穴产生,半金属中的高迁移率电子输运,金属和低维材料的光发射以及光致热电效应。我们研究了提高这些过程效率的工程策略,包括界面控制、材料选择和兼容集成。通过将基本机制与设备级指标相结合,本综述为推进集成传感、数据存储和计算的可扩展多功能光电器件提供了统一的框架和实用路线图。本综述探讨了量子材料中光子驱动的电子激发,将半导体光发生、半金属输运、光电和热电转换与器件级权衡联系起来。它强调了跨机制基准,为集成传感、存储、计算和新兴光子技术提供了互补金属氧化物半导体(CMOS)兼容光电子技术的路线图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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