Comprehensive DFT Analysis of FeSi and RhSi: Structural Stability, Electronic Contrast and Transport-Optical Responses

IF 2.8
Advanced Physics Research Pub Date : 2026-08-06 Epub Date: 2026-05-31 DOI:10.1002/apxr.70148
Md Farhan Hassan, Shaher Azad, Md Salim Hossain, Suptajoy Barua, Md Kamruzzaman
{"title":"Comprehensive DFT Analysis of FeSi and RhSi: Structural Stability, Electronic Contrast and Transport-Optical Responses","authors":"Md Farhan Hassan,&nbsp;Shaher Azad,&nbsp;Md Salim Hossain,&nbsp;Suptajoy Barua,&nbsp;Md Kamruzzaman","doi":"10.1002/apxr.70148","DOIUrl":null,"url":null,"abstract":"<p>Transition metal monosilicides, notably FeSi, the cubic (B20) and the orthorhombic (B31) phases of RhSi, have been widely studied due to their unconventional electronic properties and promising applications. Using the first-principles density functional theory in combination with the Boltzmann transport formalism, we systematically investigate their structural, mechanical, thermodynamic, thermoelectric, and optical properties. Elastic constants and polycrystalline moduli confirm the mechanical stability of these compounds. The relative softness and greater machinability of c-RhSi and o-RhSi compared to FeSi are attributed to their lower Debye temperature. We analyze the electronic character to be semiconducting for FeSi and semimetallic and metallic for c-RhSi and o-RhSi, respectively. FeSi shows superior mid-temperature power factor with a large Seebeck coefficient and peak power factor, whereas c-RhSi maintains robust electronic transport properties at higher temperatures. Both FeSi and c-RhSi are optically isotropic. c-RhSi features a high reflectivity and refractive index for the purpose of photonic applications, while FeSi offers a balanced optical response, which is suitable for cost-effective device integration.</p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 8","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2026-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.70148","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Physics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/apxr.70148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/5/31 0:00:00","PubModel":"Epub","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Transition metal monosilicides, notably FeSi, the cubic (B20) and the orthorhombic (B31) phases of RhSi, have been widely studied due to their unconventional electronic properties and promising applications. Using the first-principles density functional theory in combination with the Boltzmann transport formalism, we systematically investigate their structural, mechanical, thermodynamic, thermoelectric, and optical properties. Elastic constants and polycrystalline moduli confirm the mechanical stability of these compounds. The relative softness and greater machinability of c-RhSi and o-RhSi compared to FeSi are attributed to their lower Debye temperature. We analyze the electronic character to be semiconducting for FeSi and semimetallic and metallic for c-RhSi and o-RhSi, respectively. FeSi shows superior mid-temperature power factor with a large Seebeck coefficient and peak power factor, whereas c-RhSi maintains robust electronic transport properties at higher temperatures. Both FeSi and c-RhSi are optically isotropic. c-RhSi features a high reflectivity and refractive index for the purpose of photonic applications, while FeSi offers a balanced optical response, which is suitable for cost-effective device integration.

FeSi和RhSi的综合DFT分析:结构稳定性、电子对比和输运光学响应
过渡金属单硅化物,特别是FeSi、RhSi的立方相(B20)和正交相(B31),由于其非常规的电子性质和广阔的应用前景而得到了广泛的研究。利用第一性原理密度泛函理论结合玻尔兹曼输运形式,我们系统地研究了它们的结构、力学、热力学、热电和光学性质。弹性常数和多晶模量证实了这些化合物的机械稳定性。与FeSi相比,c-RhSi和o-RhSi的相对柔软性和更强的可加工性归因于它们较低的Debye温度。我们分析了FeSi的电子性质为半导体,c-RhSi和o-RhSi的电子性质分别为半金属和金属。FeSi表现出优异的中温功率因数,具有较大的塞贝克系数和峰值功率因数,而c-RhSi在较高温度下保持稳定的电子输运特性。FeSi和c-RhSi都是光学各向同性的。c-RhSi具有高反射率和折射率,适用于光子应用,而FeSi具有平衡的光学响应,适合于经济高效的器件集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书