Design of Optimal Gain Mask for Phased Array-Fed Offset Reflectors

IF 3.4 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Minsang Yoon;Changhyeon Im;Changsung Kim;Wongu Seo;Seulgi Park;Hosung Choo
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引用次数: 0

Abstract

In this paper, we propose a method to derive an optimal gain mask to enhance the aperture efficiency of phased array-fed reflectors (PAFRs). The optimal gain mask is obtained to uniformly illuminate the offset reflector’s surface. The optimal gain mask is derived based on the square of the distances from the feed antenna to each point on the offset reflector surface. To generate a feed pattern similar to the optimal gain mask, a $4\times 8$ array antenna is used as the feed antenna. Using this array antenna, beam synthesis is applied through the superposition of array patterns sampled at 1° intervals in both $\theta $ and $\varphi $ . In addition, to achieve sidelobe suppression, quadratic taper function is applied to the derived optimal gain mask. We then illuminate the reflector using three feed patterns: a synthesized beam based on the proposed mask, a synthesized beam following a cosecant-squared mask, and a single horn antenna pattern. In this case, the same quadratic tapering order of $N$ = 0.5 is applied to both the proposed gain mask and the cosecant-squared mask. The proposed method shows a bore-sight gain of 48.2 dBi and a sidelobe level (SLL) of −39.0 dB, representing improvements compared with the results obtained using the cosecant-squared-based pattern (47.5 dBi and −35.8 dB) and the horn antenna pattern (47.8 dBi and −34.0 dB). These results demonstrate that the proposed gain mask and beam synthesis method are effective in achieving high aperture efficiency and sidelobe suppression performance.
相控阵馈电偏置反射器最佳增益掩模设计
本文提出了一种优化增益掩模的方法来提高相控阵馈电反射器(PAFRs)的孔径效率。得到了最优增益掩模,使偏置反射器表面得到均匀照射。最优增益掩模是基于馈源天线到偏置反射面各点距离的平方而得到的。为了产生与最佳增益掩模相似的馈电方向图,使用$4\times 8$阵列天线作为馈电天线。利用该阵列天线,通过在$\theta $和$\varphi $中以1°间隔采样的阵列图案的叠加来应用波束合成。此外,为了实现旁瓣抑制,在导出的最优增益掩模中应用二次锥度函数。然后,我们使用三种馈电模式照亮反射器:基于所提出的掩模的合成波束,遵循余割平方掩模的合成波束和单喇叭天线方向图。在这种情况下,同样的二次锥形阶$N$ = 0.5被应用于所提出的增益掩模和余割平方掩模。该方法的孔径增益为48.2 dBi,旁瓣电平(SLL)为- 39.0 dB,与使用基于正切平方的方向图(47.5 dBi和- 35.8 dB)和喇叭天线方向图(47.8 dBi和- 34.0 dB)的结果相比,有了改进。结果表明,本文提出的增益掩模和波束合成方法能够有效地实现高孔径效率和副瓣抑制性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
6.50
自引率
12.50%
发文量
90
审稿时长
8 weeks
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