Regulated Grain Growth for Lead-Free Cs3Bi2I9 and Self-Powered Photodetectors

IF 3.4

ACS Applied Optical Materials Pub Date : 2026-07-24 Epub Date: 2026-07-07 DOI:10.1021/acsaom.6c00312

Yubo Wan, Mengfan Liu, Guocheng Zhu, Hao Sun, Jiahao Yang, Zizhi Wang, Huiyun Wei, Huiyin Zhang

{"title":"Regulated Grain Growth for Lead-Free Cs3Bi2I9 and Self-Powered Photodetectors","authors":"Yubo Wan, Mengfan Liu, Guocheng Zhu, Hao Sun, Jiahao Yang, Zizhi Wang, Huiyun Wei, Huiyin Zhang","doi":"10.1021/acsaom.6c00312","DOIUrl":null,"url":null,"abstract":"High\r\ncrystallinity and low trap density are fundamental prerequisites\r\nfor perovskite materials to achieve high performance in optoelectronic\r\napplications. Compared with their well-developed lead (Pb)-based counterparts,\r\nbismuth (Bi)-based perovskites exhibit inferior performance, primarily\r\ndue to poor crystallization and high defect concentrations in polycrystalline\r\nfilms. The fabrication of smooth, compact Cs3Bi2I9 films with distinctly visible large-sized grains remains\r\na significant challenge. Herein, we prepared high-quality Cs3Bi2I9 films with large grains by promoting\r\nripening growth of small grains via a modified antisolvent strategy.\r\nThe resulting Cs3Bi2I9 films exhibited\r\nenhanced crystallinity and absorption, along with reduced defect density\r\nand suppressed nonradiative recombination, which are conducive to\r\nthe fabrication of high-performance photodetectors. Self-powered photodetectors\r\nassembled from these Cs3Bi2I9 films\r\ndemonstrated an on/off ratio of up to 1.2 × 105, a\r\nresponsivity (R) of 0.44 mA/W, and a specific detectivity (D*) of\r\n4.12 × 1010 Jones under 1 sun illumination. This work\r\npaves the way for the preparation of high-quality Bibased perovskite\r\nfilms and highlights their potential in optoelectronic applications.","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2253–2261"},"PeriodicalIF":3.4000,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Optical Materials","FirstCategoryId":"1085","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaom.6c00312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/7/7 0:00:00","PubModel":"Epub","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

High crystallinity and low trap density are fundamental prerequisites for perovskite materials to achieve high performance in optoelectronic applications. Compared with their well-developed lead (Pb)-based counterparts, bismuth (Bi)-based perovskites exhibit inferior performance, primarily due to poor crystallization and high defect concentrations in polycrystalline films. The fabrication of smooth, compact Cs₃Bi₂I₉ films with distinctly visible large-sized grains remains a significant challenge. Herein, we prepared high-quality Cs₃Bi₂I₉ films with large grains by promoting ripening growth of small grains via a modified antisolvent strategy. The resulting Cs₃Bi₂I₉ films exhibited enhanced crystallinity and absorption, along with reduced defect density and suppressed nonradiative recombination, which are conducive to the fabrication of high-performance photodetectors. Self-powered photodetectors assembled from these Cs₃Bi₂I₉ films demonstrated an on/off ratio of up to 1.2 × 10⁵, a responsivity (R) of 0.44 mA/W, and a specific detectivity (D*) of 4.12 × 10¹⁰ Jones under 1 sun illumination. This work paves the way for the preparation of high-quality Bibased perovskite films and highlights their potential in optoelectronic applications.

查看原文本刊更多论文

无铅Cs3Bi2I9和自供电光电探测器的调控晶粒生长

高结晶度和低陷阱密度是钙钛矿材料在光电应用中实现高性能的基本前提。与发育良好的铅（Pb）基钙钛矿相比，铋（Bi）基钙钛矿表现出较差的性能，主要是由于结晶性差和多晶膜中缺陷浓度高。制备光滑、致密且具有清晰可见大尺寸晶粒的Cs3Bi2I9薄膜仍然是一个重大挑战。本文通过改进的抗溶剂策略促进小颗粒的成熟生长，制备了高质量的大颗粒Cs3Bi2I9薄膜。所制得的Cs3Bi2I9薄膜结晶度和吸收率提高，缺陷密度降低，非辐射复合抑制，有利于制备高性能光电探测器。由这些Cs3Bi2I9薄膜组装而成的自供电光电探测器在1个太阳照射下的开/关比高达1.2 × 105，响应率(R)为0.44 mA/W，比探测率（D*）为4.12 × 1010 Jones。这项工作为制备高质量的双基钙钛矿薄膜铺平了道路，并突出了它们在光电应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

ACS Applied Optical Materials 材料科学-光学材料-

CiteScore

1.10

自引率

0.00%

发文量

期刊介绍： ACS Applied Optical Materials is an international and interdisciplinary forum to publish original experimental and theoretical including simulation and modeling research in optical materials complementing the ACS Applied Materials portfolio. With a focus on innovative applications ACS Applied Optical Materials also complements and expands the scope of existing ACS publications that focus on fundamental aspects of the interaction between light and matter in materials science including ACS Photonics Macromolecules Journal of Physical Chemistry C ACS Nano and Nano Letters.The scope of ACS Applied Optical Materials includes high quality research of an applied nature that integrates knowledge in materials science chemistry physics optical science and engineering.