Polarization-controlled memristive switching in semiconductor–ferroelectric heterostructures for neuromorphic computing

IF 7.6 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Materials Today Nano Pub Date : 2026-08-01 Epub Date: 2026-07-18 DOI:10.1016/j.mtnano.2026.100890
Santu Kumar Ghosh, Tamal Dey, Subhajit Jana, Subham Saha, Chirantan Ganguly, Amal Kumar Das, Samit K. Ray
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Abstract

Artificial synapses are essential hardware components for realizing energy-efficient, brain-inspired neuromorphic computing systems capable of overcoming the von Neumann memory bottleneck through computation-in-memory architectures. Here, we report a polarization-controlled memristive device based on semiconductor-ferroelectric heterojunction, in which MoS2 nanosheets are incorporated into the PVDF matrix to engineer the interfacial electronic structure and modulate carrier transport. The remnant polarization of the PVDF layer generates an internal electrostatic field that dynamically controls interfacial charge trapping and detrapping, enabling polarization-assisted resistive switching in MoS2/PVDF heterostructures. The device successfully emulates essential biological synaptic behaviors, including long-term potentiation, long-term depression, and paired-pulse facilitation, exhibiting highly stable and repeatable potentiation–depression characteristics over multiple cycles. The coupling between ferroelectric polarization and interfacial electronic transport leads to enhanced switching stability and reliable learning capability. The device exhibits a low areal programming energy of approximately 28.8 nJ mm−2 per synaptic spike and demonstrates pulse-width-dependent conductance modulation. Leveraging these synaptic properties, handwritten pattern recognition using an artificial neural network (ANN) achieves a learning accuracy of 92.82%. Furthermore, system-level evaluation using a simulated spiking neural network (SNN), where experimentally derived conductance states are mapped as synaptic weights, yields a classification accuracy of 96% on the Modified National Institute of Standards and Technology (MNIST) dataset, confirming reliable learning capability and efficient neuromorphic computation. These results establish the heterostructures as an attractive platform for polarization-engineered memristive synapses and highlight their strong potential for energy-efficient neuromorphic hardware enabling brain-inspired computing.

Abstract Image

用于神经形态计算的半导体-铁电异质结构的极化控制记忆开关
人工突触是实现节能的、受大脑启发的神经形态计算系统必不可少的硬件组成部分,该系统能够通过内存中计算架构克服冯·诺伊曼记忆瓶颈。在这里,我们报道了一种基于半导体-铁电异质结的极化控制记忆器件,其中MoS2纳米片被整合到PVDF矩阵中,以设计界面电子结构并调制载流子输运。PVDF层的残余极化产生内部静电场,动态控制界面电荷捕获和去捕获,使MoS2/PVDF异质结构中的极化辅助电阻开关成为可能。该装置成功地模拟了基本的生物突触行为,包括长期增强、长期抑制和成对脉冲促进,在多个周期中表现出高度稳定和可重复的增强-抑制特性。铁电极化和界面电子输运之间的耦合增强了开关稳定性和可靠的学习能力。该器件显示出低面编程能量约28.8 nJ mm−2每个突触峰,并显示出脉冲宽度相关的电导调制。利用这些突触特性,使用人工神经网络(ANN)的手写模式识别实现了92.82%的学习准确率。此外,使用模拟尖峰神经网络(SNN)进行系统级评估,其中实验导出的电导状态被映射为突触权重,在修改的国家标准与技术研究所(MNIST)数据集上产生96%的分类准确率,证实了可靠的学习能力和高效的神经形态计算。这些结果确立了异质结构作为极化工程记忆突触的一个有吸引力的平台,并强调了它们在实现脑启发计算的节能神经形态硬件方面的强大潜力。
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来源期刊
CiteScore
11.30
自引率
3.90%
发文量
130
审稿时长
31 days
期刊介绍: Materials Today Nano is a multidisciplinary journal dedicated to nanoscience and nanotechnology. The journal aims to showcase the latest advances in nanoscience and provide a platform for discussing new concepts and applications. With rigorous peer review, rapid decisions, and high visibility, Materials Today Nano offers authors the opportunity to publish comprehensive articles, short communications, and reviews on a wide range of topics in nanoscience. The editors welcome comprehensive articles, short communications and reviews on topics including but not limited to: Nanoscale synthesis and assembly Nanoscale characterization Nanoscale fabrication Nanoelectronics and molecular electronics Nanomedicine Nanomechanics Nanosensors Nanophotonics Nanocomposites
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