Effect of Annealing Temperature on the Structural, Morphological, and Optical Properties of CdSeTe Nanoparticles for Optoelectronic Applications

IF 2.8
Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-05-11 DOI:10.1002/apxr.70139
Vanthini Nelson Adoons, Thandeka Molefe, Ahmed Umer Yimamu
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Abstract

This study investigates the influence of annealing temperature on the structural, morphological, and optical properties of CdSeTe nanoparticles synthesized via a co-precipitation method. Samples were annealed between 100°C and 400°C to examine thermally induced changes in the crystal structure, morphology, and optical behaviour. X-ray diffraction reveals a temperature-driven transition from a hexagonal CdSeTe phase in the as-prepared and 100°C sample to a mixed hexagonal–cubic structure at 200°C, followed by a complete transformation to a cubic CdTe-rich phase at higher temperatures. The crystallite size increases from 12 nm (as-prepared sample) to 33 nm (400°C sample), indicating thermally assisted structural reorganization. Scanning electron microscopy shows a progression from rod-like particles to irregular agglomerated structures with increasing temperature, while energy-dispersive X-ray spectroscopy confirms the presence of Cd, Se, and Te with uniform elemental distribution. Diffuse reflectance spectra (DRS) indicate enhanced absorption as annealing temperature increases, and bandgaps determined using the Kubelka-Munk method decrease from 2.63 to 2.12 eV up to 300°C, with a slight rise at 400°C due to possible Te loss or compositional shifts. Photoluminescence shows emission peak shifts associated with defect and structural changes. CIE chromaticity analysis places emissions in the yelgreen region.

Abstract Image

退火温度对光电用CdSeTe纳米颗粒结构、形态和光学性质的影响
本研究考察了退火温度对共沉淀法合成的CdSeTe纳米粒子的结构、形态和光学性质的影响。样品在100°C和400°C之间退火,以检查晶体结构,形貌和光学行为的热诱导变化。x射线衍射揭示了温度驱动的转变,在制备的100°C样品中,六方CdSeTe相在200°C时转变为混合六方-立方结构,然后在更高温度下完全转变为立方富cdte相。晶体尺寸从12 nm(制备样品)增加到33 nm(400℃样品),表明热辅助结构重组。扫描电镜显示,随着温度的升高,颗粒由棒状变为不规则的团块结构,而能量色散x射线光谱证实Cd、Se和Te的存在,且元素分布均匀。漫反射光谱(DRS)表明,随着退火温度的升高,吸收增强,并且使用Kubelka-Munk方法测定的带隙在300°C时从2.63 eV减小到2.12 eV,在400°C时由于可能的Te损失或成分变化而略有上升。光致发光显示出与缺陷和结构变化相关的发射峰位移。CIE色度分析将排放物置于黄绿色区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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