Gas-Selective Remote Plasma Engineering of WO3 Photoanodes for Solar Water Splitting

IF 4.5 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Advanced Materials Interfaces Pub Date : 2026-07-21 Epub Date: 2026-06-12 DOI:10.1002/admi.70572
Elham Jassemi Zargani, Amar K. Salih, Salma M. Ali, Hongjun Chen, Antonio Tricoli, Cuong Ton-That
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Abstract

The photoelectrochemical (PEC) performance of WO3 photoanodes is highly sensitive to near-surface defect chemistry, yet the role of plasma-gas chemistry in governing oxygen-vacancy states and interfacial energetics remains insufficiently understood. Here, we show that radio frequency (RF) remote plasma enables gas-selective control over the near-surface defect structure of WO3, leading to markedly different water-oxidation behavior without altering the bulk crystal structure. Under AM 1.5G illumination, Ar-treated WO3 delivers the best overall performance, exhibiting a photocurrent of 0.78 mA cm−2 at 1.23 VRHE, more than twice that of O2-treated WO3. Ar treatment generates the most oxygen-vacancy-rich surface, the highest W5+ content, and a marked increase in donor density. In contrast, O2 plasma passivates vacancy-related states, shifts the onset and flat-band potentials to more positive values, and gives the poorest PEC response, while N2 plasma yields intermediate behavior. Cathodoluminescence provides further insight into the nature of the plasma-modified defect states: Ar treatment strongly enhances the red luminescence band at ∼1.85 eV, indicating selective enrichment of reactive near-surface vacancy states. We propose a defect-assisted PEC model in which plasma-generated near-surface vacancy states increase donor density, band bending, and interfacial hole transfer, leading to more efficient utilization of photogenerated charge carriers.

Abstract Image

用于太阳能水分解的WO3光阳极气选远程等离子体工程
WO3光阳极的光电化学(PEC)性能对近表面缺陷化学非常敏感,但等离子体-气体化学在控制氧空位态和界面能量学中的作用仍然不够清楚。在这里,我们发现射频(RF)远程等离子体可以对WO3的近表面缺陷结构进行气体选择性控制,从而在不改变体晶体结构的情况下导致明显不同的水氧化行为。在AM 1.5G照明下,ar处理的WO3表现出最佳的整体性能,在1.23 VRHE下显示出0.78 mA cm−2的光电流,是o2处理的WO3的两倍多。Ar处理产生的表面富氧空位最多,W5+含量最高,供体密度显著增加。相比之下,O2等离子体钝化了空位相关态,将起始电位和平带电位移动到更正的值,并给出了最差的PEC响应,而N2等离子体则产生了中间行为。阴极发光进一步揭示了等离子体修饰缺陷态的性质:Ar处理在约1.85 eV时强烈增强了红色发光带,表明反应性近表面空位态选择性富集。我们提出了一种缺陷辅助PEC模型,在该模型中,等离子体产生的近表面空位态增加了供体密度、能带弯曲和界面空穴转移,从而更有效地利用了光产生的载流子。
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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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