A High-Precision Reference-Free Relaxation Oscillator With Supply-Tracking Switching Threshold

IF 3.2 2区 工程技术 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Chuanhang Shao;Min Song;Zhen Zhang;Jichao Sui;Ming Zhang;Yin Zhang;Zhangqing He;Meilin Wan
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引用次数: 0

Abstract

Conventional relaxation oscillators typically rely on reference circuits to generate switching threshold voltages or charging currents, resulting in increased chip area and power consumption. This article presents a high-precision relaxation oscillator that eliminates the need for reference circuits. A holding capacitor is charged through a timing resistor, and the switching threshold voltage is directly derived from the power supply using a resistor divider. Since both the charging speed and the switching threshold voltage scale with $V_{\!D\!D}$ , their dependencies cancel each other out, resulting in an oscillation period determined solely by the time constant of the holding capacitor and timing resistor. Moreover, the tracking behavior of the switching threshold with respect to $V_{\!D\!D}$ further reduces the sensitivity of the comparator delay to supply voltage variations. A dual-path charge–discharge scheme is also employed to eliminate frequency deviations caused by digital logic delays and capacitor discharge time. Fabricated in a 110-nm CMOS process, the oscillator operates at 24.5 MHz with an active area of 0.026 mm2. Measurement results indicate a power consumption of $160~\mu $ W and a maximum frequency error of 1.88% across a temperature range from −55 °C to 125 °C, corresponding to a temperature coefficient of 140 ppm/°C. When $V_{\!D\!D}$ increases from 3.0 to 3.6 V, the output frequency variation is 0.4%.
具有供电跟踪开关阈值的高精度无参考弛豫振荡器
传统的弛豫振荡器通常依靠参考电路来产生开关阈值电压或充电电流,导致芯片面积和功耗增加。本文提出了一种高精度弛豫振荡器,消除了对参考电路的需要。保持电容器通过定时电阻充电,开关阈值电压直接由使用电阻分压器的电源导出。由于充电速度和开关阈值电压均以$V_{\!D\!D}$,它们的依赖关系相互抵消,导致振荡周期仅由保持电容和定时电阻的时间常数决定。此外,切换阈值相对于$V_{\!D\!D}$进一步降低了比较器延迟对电源电压变化的敏感性。采用双路充放电方案,消除了数字逻辑延迟和电容放电时间引起的频率偏差。该振荡器采用110纳米CMOS工艺制造,工作频率为24.5 MHz,有效面积为0.026 mm2。测量结果表明,在−55°C至125°C的温度范围内,功耗为160~\mu $ W,最大频率误差为1.88%,对应的温度系数为140 ppm/°C。当美元V_ {\ D \ !D}$从3.0 V增加到3.6 V,输出频率变化0.4%。
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来源期刊
CiteScore
6.40
自引率
7.10%
发文量
187
审稿时长
3.6 months
期刊介绍: The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society. Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels. To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.
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