A Subelectron-Noise Skipper-CCD Readout ASIC With Improved Channel-to-Channel Isolation and an Integrated Cryogenic Voltage Reference

IF 7 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Fabricio Alcalde Bessia;Claudio Chavez;Troy England;Hongzhi Sun;Andrew Lathrop;Davide Braga;Miguel Sofo-Haro;Juan Estrada;Farah Fahim
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引用次数: 0

Abstract

The multichannel integrating dual-slope noise-aware (MIDNA) application-specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling (CDS) signal processing chain based on dual-slope integrators. They are designed to operate from room temperature to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated with several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as $\mathrm {0.11~e^{-}_{rms}}$ of equivalent charge for 1200 averaged samples. The channel-to-channel crosstalk was characterized, showing an improvement from −38 dB in the previous iteration to better than −62 dB in the present ASIC. When using the analog pile-up technique, one limiting factor was the residual offset after CDS. In the updated ASIC, improvements to the integrator offset have decreased the CDS residue from 3.2 to 0.2 mV, enabling additional signal pile-up.
一种改进通道间隔离和集成低温电压基准的亚电子噪声跳频ccd读出ASIC
多通道集成双斜率噪声感知(MIDNA)专用集成电路(asic)是一系列基于双斜率积分器的相关双采样(CDS)信号处理链,采用65nm低功耗CMOS工艺制造的跳频ccd读出芯片。它们的设计工作范围从室温到低温,低至84 K。ASIC的当前迭代已经制造了几个设计更新和增加了片上电压基准,从而提高了性能。这项工作展示了解决的主要漏洞、执行的更改以及由此带来的性能优势。在140 K的温度下,用单片机和陀螺ccd进行了测量,结果表明,在1200个平均样品的等效电荷的读出噪声低至$\ mathm {0.11~e^{-}_{rms}}$的情况下,利用模拟堆积技术在模拟域中平均测量电荷,可以达到单电子分辨率。对通道间串扰进行了表征,显示出从先前迭代的- 38 dB改善到当前ASIC的- 62 dB以上。当使用模拟堆积技术时,一个限制因素是CDS后的剩余偏移。在更新的ASIC中,对积分器偏移量的改进将CDS残留从3.2 mV降低到0.2 mV,从而实现了额外的信号堆积。
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来源期刊
IEEE Transactions on Instrumentation and Measurement
IEEE Transactions on Instrumentation and Measurement 工程技术-工程:电子与电气
CiteScore
9.00
自引率
23.20%
发文量
1294
审稿时长
3.9 months
期刊介绍: Papers are sought that address innovative solutions to the development and use of electrical and electronic instruments and equipment to measure, monitor and/or record physical phenomena for the purpose of advancing measurement science, methods, functionality and applications. The scope of these papers may encompass: (1) theory, methodology, and practice of measurement; (2) design, development and evaluation of instrumentation and measurement systems and components used in generating, acquiring, conditioning and processing signals; (3) analysis, representation, display, and preservation of the information obtained from a set of measurements; and (4) scientific and technical support to establishment and maintenance of technical standards in the field of Instrumentation and Measurement.
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