A Comprehensive High-to-Low Delay Model for NCFET Circuits

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2026-04-01 Epub Date: 2026-02-16 DOI:10.1109/TCSII.2026.3665021

Ananda Sankar Chakraborty;Ali M. Niknejad

引用次数: 0

Abstract

In this work, we present a comprehensive high-to-low propagation delay model for NCFET based circuits–which is also fully compatible with any baseline Si-MOSFET. The proposed physics-based analytical delay model is quick to converge, portable, covers all regions of operation, and is technology independent. The model is successfully validated against the 90nm Berkeley NCFET measurement data as well as different commercial MOSFET Process Design Kit (PDK)–under variable device dimensions, supply voltage, external load and temperature.

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NCFET电路的综合高低延迟模型

在这项工作中，我们提出了一个全面的基于NCFET电路的高到低传播延迟模型，该模型也完全兼容任何基准Si-MOSFET。所提出的基于物理的分析延迟模型具有收敛快、可移植、覆盖所有操作区域和技术无关的特点。该模型在可变器件尺寸、电源电压、外部负载和温度下，成功地针对90nm伯克利NCFET测量数据以及不同的商用MOSFET工艺设计套件（PDK）进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.