Analytical investigation of electric power in 3D bifacial polycrystalline silicon solar cells: impact of grain size and microstructural insights via digital microscopy
IF 2.8 4区 工程技术Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
{"title":"Analytical investigation of electric power in 3D bifacial polycrystalline silicon solar cells: impact of grain size and microstructural insights via digital microscopy","authors":"Gökhan Şahin","doi":"10.1007/s10825-026-02593-6","DOIUrl":null,"url":null,"abstract":"<div><p>This study presents a three-dimensional analytical model to evaluate the electrical performance of bifacial polycrystalline silicon solar cells, focusing on the effects of grain size and surface recombination velocities (Sf, Sb, Sgb). The continuity equation for minority carriers is solved using the method of separation of variables to derive closed-form expressions for excess carrier density, photocurrent, photovoltage, <i>I</i>–<i>V</i> characteristics, and power output. Power is expressed as a function of Sf, and the maximum power point (Pm) is determined through graphical analysis. Microstructural parameters such as grain size and grain boundary density obtained via digital microscopy are directly integrated into the model through their impact on grain boundary recombination velocity (Sgb). Additionally, frit thickness and uniformity are incorporated by adjusting the rear surface recombination velocity (Sb). Simulation results show that increasing grain size significantly improves carrier lifetime, photovoltage, and power output, particularly under both-sided illumination. Compared to traditional numerical approaches, the proposed analytical model offers lower computational cost and seamless integration of microscopy data, enabling rapid parametric optimization. This modeling microscopy framework provides a robust and scalable tool for the industrial optimization of high-efficiency bifacial polycrystalline silicon solar cells.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2026-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-026-02593-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents a three-dimensional analytical model to evaluate the electrical performance of bifacial polycrystalline silicon solar cells, focusing on the effects of grain size and surface recombination velocities (Sf, Sb, Sgb). The continuity equation for minority carriers is solved using the method of separation of variables to derive closed-form expressions for excess carrier density, photocurrent, photovoltage, I–V characteristics, and power output. Power is expressed as a function of Sf, and the maximum power point (Pm) is determined through graphical analysis. Microstructural parameters such as grain size and grain boundary density obtained via digital microscopy are directly integrated into the model through their impact on grain boundary recombination velocity (Sgb). Additionally, frit thickness and uniformity are incorporated by adjusting the rear surface recombination velocity (Sb). Simulation results show that increasing grain size significantly improves carrier lifetime, photovoltage, and power output, particularly under both-sided illumination. Compared to traditional numerical approaches, the proposed analytical model offers lower computational cost and seamless integration of microscopy data, enabling rapid parametric optimization. This modeling microscopy framework provides a robust and scalable tool for the industrial optimization of high-efficiency bifacial polycrystalline silicon solar cells.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.