Hybrid Plasma–GaN Semiconductor Trigger Switch for Ultra-fast High-power Pulsed Applications: a Numerical Study

Abstract

This study presents a numerical investigation of a Hybrid Plasma–Semiconductor Trigger Switch (HPTS) combining a GaN-based driver with a low-pressure pseudo-spark discharge channel. The objective is to evaluate the potential of integrating deterministic semiconductor switching with high-current plasma conduction for pulsed-power applications. A dynamic simulation model was developed to capture the interaction between time-dependent plasma conductivity, GaN driver dynamics, and circuit parasitics. Simulated results indicate that the HPTS can achieve sub-nanosecond jitter (less than 0.5 ns), bidirectional current conduction up to ±17 kA, and current rise rates of 300–400 A/ns. Performance is shown to improve with lower discharge pressures and faster driver rise. Comparative analysis with reported experimental data for thyratron and pseudo-spark switches demonstrates that the simulated HPTS achieves faster switching, higher timing precision, and improved energy transfer efficiency (96–97%). These findings highlight the potential of HPTS architectures for high-speed pulsed-power systems, while clarifying that the reported results are derived from numerical simulations rather than physical experiments.