Overcoming contact issues in bottom-contact, short-channel organic transistors with van der Waals conformal contacts

FlexMat Pub Date : 2026-06-21 Epub Date: 2026-03-25 DOI:10.1002/flm2.70058
Yuan Tan, Wei Deng, Yongji Wang, Haoyu Jiang, Xinghan Meng, Xiujuan Zhang, Xiaohong Zhang, Jiansheng Jie
{"title":"Overcoming contact issues in bottom-contact, short-channel organic transistors with van der Waals conformal contacts","authors":"Yuan Tan,&nbsp;Wei Deng,&nbsp;Yongji Wang,&nbsp;Haoyu Jiang,&nbsp;Xinghan Meng,&nbsp;Xiujuan Zhang,&nbsp;Xiaohong Zhang,&nbsp;Jiansheng Jie","doi":"10.1002/flm2.70058","DOIUrl":null,"url":null,"abstract":"<p>Miniaturization and high integration of organic field-effect transistors (OFETs) have long served as a pivotal driving force behind the advancement of organic electronics. Bottom-contact (BC) OFET device architecture offers an ideal platform for enabling high-density integration of organic devices. However, its performance exhibits significant degradation under short-channel conditions, primarily due to metal-semiconductor contact issues. Herein, we report a conformal contact transfer (CCT) strategy designed to address the contact-related issues in the BC OFETs, thereby sustaining high device performance under short-channel conditions. By functionalizing electrode surfaces and leveraging the compressive effect of interfacial water permeation, this approach significantly enhances van der Waals forces between organic semiconductor and metal electrodes while effectively eliminating trapped interfacial bubbles. This process ultimately yields a wrinkle-free, bubble-free, and conformal contact interface. Construction of this high-quality contact markedly improves carrier injection efficiency, which is accompanied by a reduction in the Schottky barrier height and a 6.5-fold decrease in contact resistance relative to traditional direct-contact configurations. The resulting BC OFETs with short-channel lengths demonstrate a high mobility of 9.43 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup> with the largest channel-length-normalized mobility (<i>μ</i>/<i>L</i>) among previously reported devices based on identical material systems. This CCT strategy effectively addresses the performance degradation arising from interfacial contact constraints during OFET miniaturization, thus providing a novel pathway for advancing organic electronics toward higher integration density.</p>","PeriodicalId":100533,"journal":{"name":"FlexMat","volume":"3 2","pages":"228-239"},"PeriodicalIF":0.0000,"publicationDate":"2026-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/flm2.70058","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"FlexMat","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/flm2.70058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/3/25 0:00:00","PubModel":"Epub","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Miniaturization and high integration of organic field-effect transistors (OFETs) have long served as a pivotal driving force behind the advancement of organic electronics. Bottom-contact (BC) OFET device architecture offers an ideal platform for enabling high-density integration of organic devices. However, its performance exhibits significant degradation under short-channel conditions, primarily due to metal-semiconductor contact issues. Herein, we report a conformal contact transfer (CCT) strategy designed to address the contact-related issues in the BC OFETs, thereby sustaining high device performance under short-channel conditions. By functionalizing electrode surfaces and leveraging the compressive effect of interfacial water permeation, this approach significantly enhances van der Waals forces between organic semiconductor and metal electrodes while effectively eliminating trapped interfacial bubbles. This process ultimately yields a wrinkle-free, bubble-free, and conformal contact interface. Construction of this high-quality contact markedly improves carrier injection efficiency, which is accompanied by a reduction in the Schottky barrier height and a 6.5-fold decrease in contact resistance relative to traditional direct-contact configurations. The resulting BC OFETs with short-channel lengths demonstrate a high mobility of 9.43 cm2·V−1·s−1 with the largest channel-length-normalized mobility (μ/L) among previously reported devices based on identical material systems. This CCT strategy effectively addresses the performance degradation arising from interfacial contact constraints during OFET miniaturization, thus providing a novel pathway for advancing organic electronics toward higher integration density.

Abstract Image

克服底部接触、范德华共形触点短沟道有机晶体管的触点问题
有机场效应晶体管(ofet)的小型化和高集成化一直是推动有机电子学进步的关键动力。底部接触(BC) OFET器件架构为实现有机器件的高密度集成提供了理想的平台。然而,它的性能在短通道条件下表现出明显的下降,主要是由于金属半导体接触问题。在此,我们报告了一种共形接触转移(CCT)策略,旨在解决BC ofet中与接触相关的问题,从而在短通道条件下保持高器件性能。通过功能化电极表面和利用界面水渗透的压缩效应,该方法显著增强了有机半导体和金属电极之间的范德华力,同时有效地消除了被捕获的界面气泡。这一过程最终产生无皱、无气泡和保形接触界面。这种高质量接触的构建显著提高了载流子注入效率,同时降低了肖特基势垒高度,与传统的直接接触配置相比,接触电阻降低了6.5倍。由此得到的短通道长度的BC ofet具有9.43 cm2·V−1·s−1的高迁移率,并且在先前报道的基于相同材料体系的器件中具有最大的通道长度归一化迁移率(μ/L)。这种CCT策略有效地解决了在OFET小型化过程中由于界面接触限制而导致的性能下降问题,从而为推动有机电子向更高集成密度发展提供了一条新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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