High-performance p-type monolayer tungsten diselenide transistors

IF 42.3 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2026-05-20 DOI:10.1038/s41928-026-01637-w

Lei Sun, Tingting Gao, Xiubin Li, Teresa Cusati, Damiano Marian, Giuseppe Iannaccone, Jing Li, Yuhui He, Jialin Yang, Shengli Zhang, Gianluca Fiori, Xuefei Li, Xiangshui Miao

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Abstract

Two-dimensional semiconductors are potential channel materials for future scaled complementary transistor technologies due to their high carrier mobility and strong immunity to the short-channel effect. However, the electrical performance of p-type transistors is still far below that of their n-type counterparts. Here we report high-performance p-type monolayer tungsten diselenide transistors with a hole mobility of 137 cm2 V−1 s−1 and a contact resistance of approximately 560 Ω µm at room temperature. Our approach uses an industry-compatible and tunable oxygen-incorporated technique to heal the defect states. A scaled p-type monolayer tungsten diselenide transistor with a channel length of 45 nm exhibits an on-state current of 1,245 μA μm−1 and an on/off ratio of ~109. Using an industry-compatible and tunable oxygen-incorporated technique to heal defect states, p-type monolayer tungsten diselenide transistors can be created with a hole mobility of 137 cm2 V−1 s−1 and a contact resistance of approximately 560 Ω µm at room temperature.

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高性能p型单层钨二硒化晶体管

二维半导体由于其高载流子迁移率和对短沟道效应的强免疫力，是未来规模互补晶体管技术的潜在沟道材料。然而，p型晶体管的电学性能仍然远远低于n型晶体管。本文报道了高性能p型单层钨二硒化晶体管，其空穴迁移率为137 cm2 V−1 s−1，室温下的接触电阻约为560 Ωµm。我们的方法使用工业兼容和可调的氧结合技术来修复缺陷状态。一个沟道长度为45 nm的p型单层钨二硒化晶体管的导通电流为1245 μA μm−1，通断比为~109。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

期刊介绍： Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.