A 73-dB PSR Trimless CMOS-Only Subthreshold Current-Mode Voltage Reference for Harsh-Environment Operation Using CTAT Current Subtraction

IF 1.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Reza Papi;Benoit Gosselin
{"title":"A 73-dB PSR Trimless CMOS-Only Subthreshold Current-Mode Voltage Reference for Harsh-Environment Operation Using CTAT Current Subtraction","authors":"Reza Papi;Benoit Gosselin","doi":"10.1109/OJCAS.2026.3698779","DOIUrl":null,"url":null,"abstract":"A new CMOS-only voltage reference, operating in current mode and leveraging subthreshold MOSFETs, is presented in this paper. In contrast to conventional solutions that sum PTAT and CTAT currents to provide a constant voltage reference, the proposed design introduces a zero temperature coefficient current by subtracting two CTAT currents—representing a key design novelty. Moreover, the presented approach does not use any trimming scheme to generate the output voltage.By eliminating bulky Bipolar Junction Transistors (BJTs), the circuit significantly reduces both area and power consumption while retaining robust performance in harsh environments over a temperature range from −20°C to 150°C. Fabricated in TSMC 130-nm CMOS technology, it delivers an output voltage near 610 mV with a measured temperature coefficient (TC) ranging from 188 ppm/°C to 212 ppm/°C across different chips. Owing to its current-mode operation, the voltage reference level can be readily adjusted through the decoder’s inputs, providing flexibility for a variety of applications. Measurement results confirm a power supply rejection (PSR) of −73 dB and a quiescent current of 3.2 <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>A from a 1.2 V supply, making this trimless voltage reference an attractive option for compact, low-power systems.","PeriodicalId":93442,"journal":{"name":"IEEE open journal of circuits and systems","volume":"7 ","pages":"330-340"},"PeriodicalIF":1.8000,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11547173","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE open journal of circuits and systems","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11547173/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/6/2 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

A new CMOS-only voltage reference, operating in current mode and leveraging subthreshold MOSFETs, is presented in this paper. In contrast to conventional solutions that sum PTAT and CTAT currents to provide a constant voltage reference, the proposed design introduces a zero temperature coefficient current by subtracting two CTAT currents—representing a key design novelty. Moreover, the presented approach does not use any trimming scheme to generate the output voltage.By eliminating bulky Bipolar Junction Transistors (BJTs), the circuit significantly reduces both area and power consumption while retaining robust performance in harsh environments over a temperature range from −20°C to 150°C. Fabricated in TSMC 130-nm CMOS technology, it delivers an output voltage near 610 mV with a measured temperature coefficient (TC) ranging from 188 ppm/°C to 212 ppm/°C across different chips. Owing to its current-mode operation, the voltage reference level can be readily adjusted through the decoder’s inputs, providing flexibility for a variety of applications. Measurement results confirm a power supply rejection (PSR) of −73 dB and a quiescent current of 3.2  $\mu $ A from a 1.2 V supply, making this trimless voltage reference an attractive option for compact, low-power systems.
基于CTAT电流减法的73 db PSR无Trimless cmos亚阈值电流模式电压基准
本文提出了一种新的纯cmos电压基准,工作在电流模式下,利用亚阈值mosfet。与将PTAT和CTAT电流相加以提供恒定参考电压的传统解决方案不同,该设计通过减去两个CTAT电流引入了零温度系数电流,这是一个关键的设计新颖之处。此外,该方法不使用任何修整方案来产生输出电压。通过消除笨重的双极结晶体管(bjt),该电路显着减少了面积和功耗,同时在- 20°C至150°C的恶劣环境中保持了强大的性能。它采用台积电130纳米CMOS技术制造,输出电压接近610 mV,不同芯片的测量温度系数(TC)范围为188 ppm/°C至212 ppm/°C。由于其电流模式操作,电压参考电平可以很容易地通过解码器的输入进行调整,为各种应用提供灵活性。测量结果证实,电源抑制(PSR)为- 73 dB, 1.2 V电源的静态电流为3.2 $\mu $ a,使此无修剪电压基准成为紧凑型低功耗系统的有吸引力的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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