Integrated optical emission spectroscopy and imaging diagnostics of atmospheric-pressure argon microwave-induced plasma

IF 3.3 2区 化学 Q2 CHEMISTRY, ANALYTICAL
Yubo Zhang, Yongsheng Liu, Jie Lin, Xiaoming Jiang, Wengui Liu, Zhenyi Liu, Wen Zeng, Meng Zhang and Qingsong Tang
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Abstract

Evaluating the ionization capability of microwave-induced plasma (MIP) ion sources remains challenging due to the lack of rapid, straightforward diagnostics. A rapid analysis platform integrating optical emission spectroscopy (OES) diagnostics with CCD-based plasma imaging was established in this study. An atmospheric-pressure argon MIP was characterized under varying microwave power (50–250 W) and argon flow rates (200–1000 SCCM). The results showed that Texc ranged from approximately 4500 to 6340 K, Trot from 758 to 1234 K, and Ne from 3.21 × 1014 to 5.55 × 1014 cm−3 across the tested conditions, in agreement with previously reported OES values for similar plasmas. Notably, the thermal and ionization characteristics of the plasma can be effectively regulated through optimization of the input power and gas flow rate. By analyzing the concomitant changes in plasma morphology, we further illustrate how discharge power and gas flow influence the stability and ionization behavior of the MIP. Finally, based on the calculated Texc and Ne, the Saha framework was used to semi-quantitatively estimate the apparent ionization tendency of selected elements and compounds. The results indicate that the ion source exhibits a high ionization tendency for species with first ionization energies below 6 eV, whereas species with first ionization energies above 10 eV are difficult to ionize. Overall, the proposed integrated spectroscopic and imaging diagnostic platform provides a practical, rapid strategy for evaluating and improving MIP ion source performance. It also offers insights into further optimization of the ion source to enhance analytical capabilities.

Abstract Image

大气压氩微波等离子体的集成发射光谱与成像诊断
由于缺乏快速、直接的诊断方法,评估微波诱导等离子体(MIP)离子源的电离能力仍然具有挑战性。本研究建立了一个集光学发射光谱(OES)诊断与基于ccd的等离子体成像于一体的快速分析平台。在不同微波功率(50 ~ 250 W)和氩气流量(200 ~ 1000 SCCM)条件下,对常压氩气MIP进行了表征。结果表明,在测试条件下,Texc范围约为4500至6340 K, Trot范围为758至1234 K, Ne范围为3.21 × 1014至5.55 × 1014 cm−3,与先前报道的类似等离子体的OES值一致。值得注意的是,通过优化输入功率和气体流量,可以有效地调节等离子体的热特性和电离特性。通过分析等离子体形态的变化,我们进一步说明了放电功率和气体流量如何影响MIP的稳定性和电离行为。最后,根据计算得到的Texc和Ne,利用Saha框架对选定元素和化合物的表观电离倾向进行半定量估计。结果表明,离子源对第一电离能低于6 eV的物质具有较高的电离倾向,而第一电离能高于10 eV的物质则难以电离。总体而言,所提出的集成光谱和成像诊断平台为评估和改进MIP离子源性能提供了一种实用、快速的策略。它还提供了进一步优化离子源的见解,以增强分析能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
6.20
自引率
26.50%
发文量
228
审稿时长
1.7 months
期刊介绍: Innovative research on the fundamental theory and application of spectrometric techniques.
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