Design of a Dual-Band Reconfigurable Doherty Power Amplifier Based on Dual-Mode and Dual-State Optimization

IF 1.1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Yuxuan Sun, Jing Xia, Wa Kong, Zhongpeng Ni, Heng Zhang, Wence Zhang, Chao Yu, Xiao-Wei Zhu
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引用次数: 0

Abstract

This paper presents a reconfigurable dual-band Doherty power amplifier (DPA) that uses a dual-mode and dual-state optimization method to meet the requirements of different operating frequency bands. First, load-pull simulations are performed for both frequency bands in saturation and back-off power states. Then, the on/off states of PIN diodes are switched to change the carrier output matching network (OMN) and the phase of the DPA. When the PIN diodes are off, the DPA operates in Mode 1 (2.6–2.8 GHz), while it operates in Mode 2 (3.4–3.7 GHz) when the PIN diodes are on. To ensure high efficiency in different modes, the carrier OMN is optimized using an adaptive particle swarm optimization algorithm by targeting a dual-mode and dual-state impedance objective function, meeting the impedance requirements for both saturation and back-off power states under Mode 1 and Mode 2. For validation, a dual-band reconfigurable DPA operating at 2.6–2.8 GHz and 3.4–3.7 GHz is designed and fabricated. Measurement results show that for Mode 1 and Mode 2, the saturated efficiency exceeds 52.7%, the 6 dB back-off efficiency exceeds 42.5%, and the saturated power exceeds 43 dBm.

基于双模双态优化的双带可重构Doherty功率放大器设计
本文提出了一种可重构双频Doherty功率放大器(DPA),该放大器采用双模双态优化方法来满足不同工作频段的要求。首先,在饱和状态和回退状态下对两个频段进行了负载-拉力模拟。然后,切换PIN二极管的通/关状态来改变载波输出匹配网络(OMN)和DPA的相位。当PIN二极管关闭时,DPA工作在模式1 (2.6-2.8 GHz),而当PIN二极管打开时,它工作在模式2 (3.4-3.7 GHz)。为了保证在不同模式下的高效率,以双模双态阻抗目标函数为目标,采用自适应粒子群优化算法对载体OMN进行优化,同时满足模式1和模式2下饱和和回退功率状态的阻抗要求。为了验证,设计并制作了工作在2.6-2.8 GHz和3.4-3.7 GHz的双频可重构DPA。测量结果表明,在模式1和模式2下,饱和效率超过52.7%,6 dB回退效率超过42.5%,饱和功率超过43 dBm。
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来源期刊
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters 工程技术-工程:电子与电气
CiteScore
3.40
自引率
20.00%
发文量
371
审稿时长
4.3 months
期刊介绍: Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication
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