Calculation of field emission parameters from short carbon nanotubes with structural defects

IF 1.8 4区 化学 Q3 CHEMISTRY, MULTIDISCIPLINARY
Oleg Borisovich Tomilin, Evgeniya Valerievna Rodionova, Evgeniy Anatolyevich Rodin, Alexander Vladimirovich Knyazev, Nikolai Alexandrovich Poklonski
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引用次数: 0

Abstract

The work is devoted to studying the influence of structural surface defects in short carbon nanotubes with chirality (n,0) and (n,n) on their emission properties. Quantum chemical modeling (using DFT/B3LYP/6-31G method) was performed on the electronic structure of 180 model carbon nanotubes containing Stone–Wales defects, inverse Stone–Wales defects, and carbon vacancy defects of various sizes and concentrations. An analysis of the electron density distribution demonstrated that electron emission centers are located, both at the end faces of the nanotubes and at vacancy defect sites. Using the theory of emission molecular orbitals, it was found that these electron emission centers generate emission currents at various external electric field strengths: vacancy defects generate an emission current starting with weak fields, while emission from the end faces of the nanotubes occurs only when a threshold electric field strength is reached. The obtained results directly explain the experimentally observed emission currents. The influence of defects in model nanotubes on their stability was studied. The energies required to form carbon framework defects in the model nanotubes were determined.

Graphical abstract

The alternative text for this image may have been generated using AI.

Schematic representation of Stone-Wales (SW, InvSW) and vacancy defects (V1, V2, V3) in carbon nanotubestructures. The diagram illustrates the formation pathways and energy relationships (E) between diff erent defectconfi gurations, showing how sequential carbon atom removal (-1C, -2C, -3C) leads to increasingly complex vacancydefects and their impact on CNT structure

Abstract Image

含结构缺陷的短碳纳米管场发射参数的计算
研究手性为(n,0)和(n,n)的短碳纳米管表面结构缺陷对其发射性能的影响。采用DFT/B3LYP/6-31G方法对180个含有不同尺寸和浓度的Stone-Wales缺陷、逆Stone-Wales缺陷和碳空位缺陷的模型碳纳米管的电子结构进行了量子化学建模。电子密度分布分析表明,电子发射中心位于纳米管的端面和空位缺陷位置。利用发射分子轨道理论,发现这些电子发射中心在不同的外电场强下产生发射电流:空位缺陷从弱电场开始产生发射电流,而纳米管的端面只有在达到阈值电场强度时才会产生发射。所得结果直接解释了实验观测到的发射电流。研究了模型纳米管中缺陷对其稳定性的影响。确定了在模型纳米管中形成碳框架缺陷所需的能量。图形抽象此图像的替代文本可能是使用AI生成的。碳纳米管结构中的Stone-Wales (SW, InvSW)和空位缺陷(V1, V2, V3)的示意图。该图说明了不同缺陷构型之间的形成途径和能量关系(E),显示了顺序的碳原子去除(-1C, -2C, -3C)如何导致越来越复杂的空位缺陷及其对碳纳米管结构的影响
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来源期刊
Journal of Chemical Sciences
Journal of Chemical Sciences CHEMISTRY, MULTIDISCIPLINARY-
CiteScore
3.10
自引率
5.90%
发文量
107
审稿时长
1 months
期刊介绍: Journal of Chemical Sciences is a monthly journal published by the Indian Academy of Sciences. It formed part of the original Proceedings of the Indian Academy of Sciences – Part A, started by the Nobel Laureate Prof C V Raman in 1934, that was split in 1978 into three separate journals. It was renamed as Journal of Chemical Sciences in 2004. The journal publishes original research articles and rapid communications, covering all areas of chemical sciences. A significant feature of the journal is its special issues, brought out from time to time, devoted to conference symposia/proceedings in frontier areas of the subject, held not only in India but also in other countries.
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